Ex-situ doped semiconductor transport layer
A method of making an ex-situ doped semiconductor transport layer for use in an electronic device includes: growing a first set of semiconductor nanoparticles having surface organic ligands in a colloidal solution; growing a second set of dopant material nanoparticles having surface organic ligands in a colloidal solution; depositing a mixture of the first set of semiconductor nanoparticles and the second set of dopant material nanoparticles on a surface, wherein there are more semiconductor nanoparticles than dopant material nanoparticles; performing a first anneal of the deposited mixture of nanoparticles so that the organic ligands boil off the surfaces of the first and second set of nanoparticles; performing a second anneal of the deposited mixture so that the semiconductor nanoparticles fuse to form a continuous semiconductor layer and the dopant material atoms diffuse out from the dopant material nanoparticles and into the continuous semiconductor layer.
- Research Organization:
- Eastman Kodak Company, Rochester, NY (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FC26-06NT42864
- Assignee:
- Eastman Kodak Company (Rochester, NY)
- Patent Number(s):
- 7,375,011
- Application Number:
- 11/677,794
- OSTI ID:
- 1531557
- Resource Relation:
- Patent File Date: 2007-02-22
- Country of Publication:
- United States
- Language:
- English
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