Doped nanoparticle-based semiconductor junction

Kahen, Keith B.

Doped nanoparticle-based semiconductor junction

Patent · 20 October 2009

OSTI ID:1531828

Kahen, Keith B.

A doped semiconductor junction for use in an electronic device and a method for making such junction is disclosed. The junction includes a first polycrystalline semiconductor layer doped with donors or acceptors over a substrate such that the first doped semiconductor layer has a first polarity, the first layer including fused semiconductor nanoparticles; and a second layer in contact with the first semiconductor layer over a substrate to form the semiconductor junction.

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Research Organization:: Eastman Kodak Company, Rochester, NY (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: FC26-06NT42864

Assignee:: Eastman Kodak Company (Rochester, NY)

Patent Number(s):: 7,605,062

Application Number:: 11/678,734

OSTI ID:: 1531828

Country of Publication:: United States

Language:: English

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Doped nanoparticle-based semiconductor junction

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