Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes

Myers, Daniel J.; Gelžinytė, Kristina; Ho, Wan Ying; Iveland, Justin; Martinelli, Lucio; Peretti, Jacques; Weisbuch, Claude; Speck, James S.

doi:10.1063/1.5030208

Title: Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes

Journal Article · Mon Aug 06 00:00:00 EDT 2018 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.5030208· OSTI ID:1511166

^[1]; Gelžinytė, Kristina ^[2];

^[1]; Iveland, Justin ^[1]; Martinelli, Lucio ^[3]; Peretti, Jacques ^[3]; Weisbuch, Claude ^[4]; Speck, James S. ^[1]

Univ. of California, Santa Barbara, CA (United States)
Vilnius Univ., Vilnius (Lithuania)
Univ. Paris-Saclay, Palaiseau Cedex (France)
Univ. of California, Santa Barbara, CA (United States); Univ. Paris-Saclay, Palaiseau Cedex (France)

The measurement of the energy distribution of vacuum emitted electrons from InGaN/GaN light-emitting diodes (LEDs) has proven essential in understanding the efficiency loss mechanism known as droop. We report on the measurement and identification of a new low-energy feature in addition to the previously measured three peaks present in the electron emission spectrum from a forward biased LED. Photoemission measurements show that the two low-energy peaks correspond to photoemitted electrons from each of the p-contact metals, palladium and gold. We confirm that the mid and high-energy peaks are due to electrons which have transited the p-type region of the device and have been emitted from the semiconductor surface from the bulk Gamma-valley or a high-energy side valley

View Accepted Manuscript (DOE)

View Accepted Manuscript (Publisher)

Cite

Export

Save

Research Organization:: Univ. of California, Santa Barbara, CA (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Energy Efficiency Office. Building Technologies Office

Contributing Organization:: Ecole Polytechnique; Ecole Polytechnique Paris Vilnius University

Grant/Contract Number:: EE0007096

OSTI ID:: 1511166

Alternate ID(s):: OSTI ID: 1463053; OSTI ID: 1635228; OSTI ID: 1635229

Journal Information:: Journal of Applied Physics, Vol. 124, Issue 5; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 6 works

Citation information provided by
Web of Science

References (29)

Efficiency droop in GaN LEDs at high injection levels: Role of hydrogen Bochkareva, N. I.; Sheremet, I. A.; Shreter, Yu. G. Semiconductors, Vol. 50, Issue 10 https://doi.org/10.1134/S1063782616100109	journal	October 2016
Spherical sector electrostatic analyzers for measurements of energy and angular distributions DeSerio, Robert Review of Scientific Instruments, Vol. 60, Issue 3 https://doi.org/10.1063/1.1140386	journal	March 1989
Exciton localization in InGaN quantum well devices Chichibu, Shigefusa Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 16, Issue 4 https://doi.org/10.1116/1.590149	journal	July 1998
Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop Iveland, Justin; Martinelli, Lucio; Peretti, Jacques Physical Review Letters, Vol. 110, Issue 17 https://doi.org/10.1103/PhysRevLett.110.177406	journal	April 2013
Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes Li, Chi-Kang; Piccardo, Marco; Lu, Li-Shuo Physical Review B, Vol. 95, Issue 14 https://doi.org/10.1103/PhysRevB.95.144206	journal	April 2017
Auger recombination rates in nitrides from first principles Delaney, Kris T.; Rinke, Patrick; Van de Walle, Chris G. Applied Physics Letters, Vol. 94, Issue 19 https://doi.org/10.1063/1.3133359	journal	May 2009
Thermal Annealing Effects on P-Type Mg-Doped GaN Films Nakamura, Shuji; Mukai, Takashi; Senoh, Masayuki Japanese Journal of Applied Physics, Vol. 31, Issue Part 2, No. 2B https://doi.org/10.1143/JJAP.31.L139	journal	February 1992
White light-emitting diodes: History, progress, and future: White light-emitting diodes Cho, Jaehee; Park, Jun Hyuk; Kim, Jong Kyu Laser & Photonics Reviews, Vol. 11, Issue 2 https://doi.org/10.1002/lpor.201600147	journal	March 2017
Determination of the first satellite valley energy in the conduction band of wurtzite GaN by near-band-gap photoemission spectroscopy Piccardo, Marco; Martinelli, Lucio; Iveland, Justin Physical Review B, Vol. 89, Issue 23 https://doi.org/10.1103/PhysRevB.89.235124	journal	June 2014
Time-resolved intervalley transitions in GaN single crystals Wu, S.; Geiser, P.; Jun, J. Journal of Applied Physics, Vol. 101, Issue 4 https://doi.org/10.1063/1.2496399	journal	February 2007
Origin of efficiency droop in GaN-based light-emitting diodes Kim, Min-Ho; Schubert, Martin F.; Dai, Qi Applied Physics Letters, Vol. 91, Issue 18 https://doi.org/10.1063/1.2800290	journal	October 2007
Efficiency droop and incomplete carrier localization in InGaN/GaN quantum well light-emitting diodes Bochkareva, N. I.; Rebane, Y. T.; Shreter, Y. G. Applied Physics Letters, Vol. 103, Issue 19 https://doi.org/10.1063/1.4828780	journal	November 2013
Energy- and spin-analysis of polarized photoelectrons from NEA GaAsP Kirschner, J.; Oepen, H. P.; Ibach, H. Applied Physics A Solids and Surfaces, Vol. 30, Issue 3 https://doi.org/10.1007/BF00620537	journal	March 1983
Photoemission from Si Induced by an Internal Electric Field Simon, R. E.; Spicer, W. E. Physical Review, Vol. 119, Issue 2 https://doi.org/10.1103/PhysRev.119.621	journal	July 1960
Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes Espenlaub, Andrew C.; Alhassan, Abdullah I.; Nakamura, Shuji Applied Physics Letters, Vol. 112, Issue 14 https://doi.org/10.1063/1.5021475	journal	April 2018
Photoemission from activated gallium arsenide. I. Very-high-resolution energy distribution curves Drouhin, H. -J.; Hermann, C.; Lampel, G. Physical Review B, Vol. 31, Issue 6 https://doi.org/10.1103/PhysRevB.31.3859	journal	March 1985
Experimental Evidence for Optical Population of the $X$ Minima in GaAs Eden, R. C.; Moll, J. L.; Spicer, W. E. Physical Review Letters, Vol. 18, Issue 15 https://doi.org/10.1103/PhysRevLett.18.597	journal	April 1967
Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes Kioupakis, Emmanouil; Rinke, Patrick; Delaney, Kris T. Applied Physics Letters, Vol. 98, Issue 16 https://doi.org/10.1063/1.3570656	journal	April 2011
Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material Ryu, Han-Youl; Shin, Dong-Soo; Shim, Jong-In Applied Physics Letters, Vol. 100, Issue 13 https://doi.org/10.1063/1.3698113	journal	March 2012
Auger recombination in InGaN measured by photoluminescence Shen, Y. C.; Mueller, G. O.; Watanabe, S. Applied Physics Letters, Vol. 91, Issue 14 https://doi.org/10.1063/1.2785135	journal	October 2007
Defect related issues in the “current roll-off” in InGaN based light emitting diodes Monemar, B.; Sernelius, B. E. Applied Physics Letters, Vol. 91, Issue 18 https://doi.org/10.1063/1.2801704	journal	October 2007
Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy Marcinkevičius, Saulius; Uždavinys, Tomas K.; Foronda, Humberto M. Physical Review B, Vol. 94, Issue 23 https://doi.org/10.1103/PhysRevB.94.235205	journal	December 2016
Electron emission from GaN n–p junctions Shaw, Jonathan L.; Treece, Randolph E.; Patel, Dinesh Applied Physics Letters, Vol. 81, Issue 16 https://doi.org/10.1063/1.1514824	journal	October 2002
Origin of electrons emitted into vacuum from InGaN light emitting diodes Iveland, Justin; Piccardo, Marco; Martinelli, Lucio Applied Physics Letters, Vol. 105, Issue 5 https://doi.org/10.1063/1.4892473	journal	August 2014
Low-temperature method of cleaning p-GaN(0001) surfaces for photoemitters with effective negative electron affinity Tereshchenko, O. E.; Shaibler, G. É.; Yaroshevich, A. S. Physics of the Solid State, Vol. 46, Issue 10 https://doi.org/10.1134/1.1809437	journal	October 2004
GaN-Based Light-Emitting Diodes: Efficiency at High Injection Levels Ozgur, Ümit Proceedings of the IEEE, Vol. 98, Issue 7 https://doi.org/10.1109/JPROC.2010.2043210	journal	July 2010
Invention, development, and status of the blue light-emitting diode, the enabler of solid-state lighting Feezell, Daniel; Nakamura, Shuji Comptes Rendus Physique, Vol. 19, Issue 3 https://doi.org/10.1016/j.crhy.2017.12.001	journal	March 2018
Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop Iveland, Justin; Martinelli, Lucio; Peretti, Jacques arXiv https://doi.org/10.48550/arxiv.1304.5469	text	January 2013
Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes Li, Chi-Kang; Piccardo, Marco; Lu, Li-Shuo arXiv https://doi.org/10.48550/arxiv.1704.05533	text	January 2017

Cited By (1)

Evidence of trap-assisted Auger recombination in low radiative efficiency MBE-grown III-nitride LEDs Espenlaub, Andrew C.; Myers, Daniel J.; Young, Erin C. Journal of Applied Physics, Vol. 126, Issue 18 https://doi.org/10.1063/1.5096773	journal	November 2019

Similar Records

Origin of electrons emitted into vacuum from InGaN light emitting diodes

Journal Article · Mon Aug 04 00:00:00 EDT 2014 · Applied Physics Letters · OSTI ID:1511166

Iveland, Justin; Young, Nathan; Speck, James S.; +6 more

Origin of electrons emitted into vacuum from InGaN light emitting diodes

Journal Article · Tue Aug 05 00:00:00 EDT 2014 · Applied Physics Letters · OSTI ID:1511166

Iveland, Justin; Piccardo, Marco; Martinelli, Lucio; +6 more

Reduction of efficiency droop in c-plane InGaN/GaN light-emitting diodes using a thick single quantum well with doped barriers

Journal Article · Mon Nov 29 00:00:00 EST 2021 · Applied Physics Letters · OSTI ID:1511166

Chow, Y. C.; Lynsky, C.; Wu, F.; +4 more

Related Subjects

74 ATOMIC AND MOLECULAR PHYSICS
work functions
photoexcitations
electronic bandstructure
semiconductors
light emitting diodes
electron spectroscopy
solid states lighting
light emitting diodes
solid state lighting
light emitting diodes
solid states lighting

Title: Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes

Citation Formats

References (29)

Cited By (1)

Similar Records

Related Subjects