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Title: Solar cell contact formation using laser ablation

Patent ·
OSTI ID:1503292
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The formation of solar cell contacts using a laser is described. A method of fabricating a back-contact solar cell includes forming a poly-crystalline material layer above a single-crystalline substrate. The method also includes forming a dielectric material stack above the poly-crystalline material layer. The method also includes forming, by laser ablation, a plurality of contacts holes in the dielectric material stack, each of the contact holes exposing a portion of the poly-crystalline material layer; and forming conductive contacts in the plurality of contact holes.

Research Organization:
SunPower Corporation, San Jose, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
FC36-07GO17043
Assignee:
SunPower Corporation (San Jose, CA)
Patent Number(s):
10,211,349
Application Number:
14/793,356
OSTI ID:
1503292
Resource Relation:
Patent File Date: 2015 Jul 07
Country of Publication:
United States
Language:
English

References (8)

Semiconductor integrated circuit device and process for producing the same patent February 1990
Back side contact solar cell with doped polysilicon regions patent December 2008
Solar cell contact formation using laser ablation patent December 2012
Solar cell contact formation using laser ablation patent July 2014
Solar Cell Having Silicon Nano-Particle Emitter patent-application May 2008
Anti-Reflective Coating With High Optical Absorption Layer For Backside Contact Solar Cells patent-application June 2009
Metallization Contact Structures and Methods for Forming Multiple-Layer Electrode Structures for Silicon Solar Cells patent-application June 2009
Trench Process And Structure For Backside Contact Solar Cells With Polysilicon Doped Regions patent-application December 2009

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36 MATERIALS SCIENCE
14 SOLAR ENERGY