skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Solar cell contact formation using laser ablation

Abstract

The formation of solar cell contacts using a laser is described. A method of fabricating a back-contact solar cell includes forming a poly-crystalline material layer above a single-crystalline substrate. The method also includes forming a dielectric material stack above the poly-crystalline material layer. The method also includes forming, by laser ablation, a plurality of contacts holes in the dielectric material stack, each of the contact holes exposing a portion of the poly-crystalline material layer; and forming conductive contacts in the plurality of contact holes.

Inventors:
; ;
Publication Date:
Research Org.:
SunPower Corporation, San Jose, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1195928
Patent Number(s):
9,087,939
Application Number:
14/334,401
Assignee:
SunPower Corporation (San Jose, CA)
DOE Contract Number:  
FC36-07GO17043
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Jul 17
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE

Citation Formats

Harley, Gabriel, Smith, David D., and Cousins, Peter John. Solar cell contact formation using laser ablation. United States: N. p., 2015. Web.
Harley, Gabriel, Smith, David D., & Cousins, Peter John. Solar cell contact formation using laser ablation. United States.
Harley, Gabriel, Smith, David D., and Cousins, Peter John. 2015. "Solar cell contact formation using laser ablation". United States. https://www.osti.gov/servlets/purl/1195928.
@article{osti_1195928,
title = {Solar cell contact formation using laser ablation},
author = {Harley, Gabriel and Smith, David D. and Cousins, Peter John},
abstractNote = {The formation of solar cell contacts using a laser is described. A method of fabricating a back-contact solar cell includes forming a poly-crystalline material layer above a single-crystalline substrate. The method also includes forming a dielectric material stack above the poly-crystalline material layer. The method also includes forming, by laser ablation, a plurality of contacts holes in the dielectric material stack, each of the contact holes exposing a portion of the poly-crystalline material layer; and forming conductive contacts in the plurality of contact holes.},
doi = {},
url = {https://www.osti.gov/biblio/1195928}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {7}
}