Driving chemical interactions at graphene-germanium van der Waals interfaces via thermal annealing

Kiraly, Brian; Mannix, Andrew J.; Jacobberger, Robert M.; Fisher, Brandon L.; Arnold, Michael S.; Hersam, Mark C.; Guisinger, Nathan P.

doi:10.1063/1.5053083

Title: Driving chemical interactions at graphene-germanium van der Waals interfaces via thermal annealing

Journal Article · Mon Nov 19 00:00:00 EST 2018 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5053083· OSTI ID:1493753

Kiraly, Brian ^[1]; Mannix, Andrew J. ^[1]; Jacobberger, Robert M. ^[2]; Fisher, Brandon L. ^[3]; Arnold, Michael S. ^[2];

^[4]; Guisinger, Nathan P. ^[3]

Argonne National Lab. (ANL), Argonne, IL (United States); Northwestern Univ., Evanston, IL (United States)
Univ. of Wisconsin-Madison, Madison, WI (United States)
Argonne National Lab. (ANL), Argonne, IL (United States)
Northwestern Univ., Evanston, IL (United States)

Despite its extraordinary charge carrier mobility, the lack of an electronic bandgap in graphene limits its utilization in electronic devices. To overcome this issue, researchers have attempted to chemically modify the pristine graphene lattice in order to engineer its electronic bandstructure. While significant progress has been achieved, aggressive chemistries are often employed that are difficult to pattern and control. In an effort to overcome this issue, here we utilize the well-defined van der Waals interface between crystalline Ge(110) and epitaxial graphene to template covalent chemistry. In particular, by annealing atomically pristine graphene-germanium interfaces synthesized by chemical vapor deposition under ultra-high vacuum conditions, chemical bonding is driven between the germanium surface and the graphene lattice. The resulting bonds act as charge scattering centers that are identified with scanning tunneling microscopy. The generation of atomic-scale defects are independently confirmed with Raman spectroscopy, revealing significant densities within the graphene lattice. Furthermore, the resulting chemically modified graphene has the potential to impact next-generation nanoelectronic applications.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1493753

Journal Information:: Applied Physics Letters, Vol. 113, Issue 21; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 8 works

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