Catalytically mediated epitaxy of 3D semiconductors on van der Waals substrates

Periwal, Priyanka; Thomsen, Joachim Dahl; Reidy, Kate; Varnavides, Georgios; Zakharov, Dmitri N.; Gignac, Lynne; Reuter, Mark C.; Booth, Timothy J.; Hofmann, Stephan; Ross, Frances M.

doi:10.1063/5.0006300

Catalytically mediated epitaxy of 3D semiconductors on van der Waals substrates

Journal Article · Wed Sep 16 00:00:00 EDT 2020 · Applied Physics Reviews

DOI:https://doi.org/10.1063/5.0006300· OSTI ID:1677679

Periwal, Priyanka ^[1]; ^[2]; ^[3]; ^[4]; ^[5]; Gignac, Lynne ^[6]; Reuter, Mark C. ^[6]; ^[2]; ^[7]; ^[8]

Univ. of Cambridge (United Kingdom); IBM, Yorktown Heights, NY (United States). Thomas J. Watson Research Center
Technical Univ. of Denmark, Lyngby (Denmark)
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Harvard Univ., Cambridge, MA (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States)
IBM, Yorktown Heights, NY (United States). Thomas J. Watson Research Center
Univ. of Cambridge (United Kingdom)
IBM, Yorktown Heights, NY (United States). Thomas J. Watson Research Center; Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

The formation of well-controlled interfaces between materials of different structure and bonding is a key requirement when developing new devices and functionalities. Of particular importance are epitaxial or low defect density interfaces between two-dimensional materials and three-dimensional semiconductors or metals, where an interfacial structure influences electrical conductivity in field effect and optoelectronic devices, charge transfer for spintronics and catalysis, and proximity-induced superconductivity. Epitaxy and hence well-defined interfacial structure has been demonstrated for several metals on van der Waals-bonded substrates. Semiconductor epitaxy on such substrates has been harder to control, for example during chemical vapor deposition of Si and Ge on graphene. Here, we demonstrate a catalytically mediated het-eroepitaxy approach to achieve epitaxial growth of three-dimensional semiconductors such as Ge and Si on van der Waals-bonded materials such as graphene and hexagonal boron nitride. Epitaxy is "transferred" from the substrate to semiconductor nanocrystals via solid metal nano-crystals that readily align on the substrate and catalyze the formation of aligned nuclei of the semiconductor. In situ transmission electron microscopy allows us to elucidate the reaction pathway for this process and to show that solid metal nanocrystals can catalyze semiconductor growth at a significantly lower temperature than direct chemical vapor deposition or deposition mediated by liquid catalyst droplets. We discuss Ge and Si growth as a model system to explore the details of such hetero-interfacing and its applicability to a broader range of materials.

View Accepted Manuscript (DOE)

Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: Engineering and Physical Sciences Research Council (EPSRC); European Research Council (ERC); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: SC0012704

OSTI ID:: 1677679

Report Number(s):: BNL-219973-2020--JAAM

Journal Information:: Applied Physics Reviews, Journal Name: Applied Physics Reviews Journal Issue: 3 Vol. 7; ISSN 1931-9401

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

References (54)

25th Anniversary Article: Semiconductor Nanowires - Synthesis, Characterization, and Applications Dasgupta, Neil P.; Sun, Jianwei; Liu, Chong Advanced Materials, Vol. 26, Issue 14 https://doi.org/10.1002/adma.201305929	journal	March 2014
The growth of Au films on graphite in ultra-high vacuum Darby, T. P.; Wayman, C. M. Physica Status Solidi (a), Vol. 1, Issue 4 https://doi.org/10.1002/pssa.19700010413	journal	April 1970
The Ag-Si (Silver-Silicon) system Olesinski, R. W.; Gokhale, A. B.; Abbaschian, G. J. Bulletin of Alloy Phase Diagrams, Vol. 10, Issue 6 https://doi.org/10.1007/BF02877631	journal	December 1989
Direct observation of epitaxial alignment of Au on MoS2 at atomic resolution Sun, Yinghui; Zhao, Haofei; Zhou, Dan Nano Research, Vol. 12, Issue 4 https://doi.org/10.1007/s12274-019-2329-4	journal	March 2019
The decoration of, and epitaxial growth of gold on, graphite surfaces Evans, E. L.; Bahl, O. P.; Thomas, J. M. Carbon, Vol. 5, Issue 6 https://doi.org/10.1016/0008-6223(67)90038-3	journal	December 1967
Experimental conditions to obtain clean graphite surfaces Metois, J. J.; Heyraud, J. C.; Takeda, Y. Thin Solid Films, Vol. 51, Issue 1 https://doi.org/10.1016/0040-6090(78)90219-5	journal	May 1978
Van der Waals epitaxy for highly lattice-mismatched systems Koma, Atsushi Journal of Crystal Growth, Vol. 201-202 https://doi.org/10.1016/S0022-0248(98)01329-3	journal	May 1999
On the interpretation of the forbidden spots observed in the electron diffraction patterns of flat Au triangular nanoparticles Reyes-Gasga, J.; Gómez-Rodríguez, A.; Gao, Xiaoxia Ultramicroscopy, Vol. 108, Issue 9 https://doi.org/10.1016/j.ultramic.2008.03.005	journal	August 2008
Room Temperature van der Waals Epitaxy of Metal Thin Films on Molybdenum Disulfide Domask, Anna C.; Cooley, Kayla A.; Kabius, Bernd Crystal Growth & Design, Vol. 18, Issue 6 https://doi.org/10.1021/acs.cgd.8b00257	journal	April 2018
Silver as Seed-Particle Material for GaAs Nanowires—Dictating Crystal Phase and Growth Direction by Substrate Orientation Lindberg, Caroline; Whiticar, Alexander; Dick, Kimberly A. Nano Letters, Vol. 16, Issue 4 https://doi.org/10.1021/acs.nanolett.5b04218	journal	March 2016
Synthesis of Group IV Nanowires on Graphene: The Case of Ge Nanocrawlers Mataev, Elnatan; Rastogi, Sahil Kumar; Madhusudan, Atul Nano Letters, Vol. 16, Issue 8 https://doi.org/10.1021/acs.nanolett.6b02451	journal	July 2016
Monolayer Molybdenum Disulfide Transistors with Single-Atom-Thick Gates Zhu, Yibo; Li, Yijun; Arefe, Ghidewon Nano Letters, Vol. 18, Issue 6 https://doi.org/10.1021/acs.nanolett.8b01091	journal	May 2018
Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p – n Heterojunctions Xu, Yang; Cheng, Cheng; Du, Sichao ACS Nano, Vol. 10, Issue 5 https://doi.org/10.1021/acsnano.6b01842	journal	May 2016
Oxidation of Suspended Graphene: Etch Dynamics and Stability Beyond 1000 °C Thomsen, Joachim Dahl; Kling, Jens; Mackenzie, David M. A. ACS Nano https://doi.org/10.1021/acsnano.8b08979	journal	January 2019
Monolayer Graphene/Germanium Schottky Junction As High-Performance Self-Driven Infrared Light Photodetector Zeng, Long-Hui; Wang, Ming-Zheng; Hu, Han ACS Applied Materials & Interfaces, Vol. 5, Issue 19 https://doi.org/10.1021/am4026505	journal	September 2013
Single-Molecule Catalysis Mapping Quantifies Site-Specific Activity and Uncovers Radial Activity Gradient on Single 2D Nanocrystals Andoy, Nesha May; Zhou, Xiaochun; Choudhary, Eric Journal of the American Chemical Society, Vol. 135, Issue 5 https://doi.org/10.1021/ja309948y	journal	January 2013
Thermal Decomposition Mechanism of Disilane Yoshida, Kazumasa; Matsumoto, Keiji; Oguchi, Tatsuo The Journal of Physical Chemistry A, Vol. 110, Issue 14 https://doi.org/10.1021/jp055280p	journal	April 2006
Wedging Transfer of Nanostructures Schneider, Grégory F.; Calado, Victor E.; Zandbergen, Henny Nano Letters, Vol. 10, Issue 5 https://doi.org/10.1021/nl1008037	journal	May 2010
Formation of Metastable Liquid Catalyst during Subeutectic Growth of Germanium Nanowires Gamalski, A. D.; Tersoff, J.; Sharma, R. Nano Letters, Vol. 10, Issue 8 https://doi.org/10.1021/nl101349e	journal	August 2010
Graphene Annealing: How Clean Can It Be? Lin, Yung-Chang; Lu, Chun-Chieh; Yeh, Chao-Huei Nano Letters, Vol. 12, Issue 1, p. 414-419 https://doi.org/10.1021/nl203733r	journal	December 2011
Vertically Aligned GaAs Nanowires on Graphite and Few-Layer Graphene: Generic Model and Epitaxial Growth Munshi, A. Mazid; Dheeraj, Dasa L.; Fauske, Vidar T. Nano Letters, Vol. 12, Issue 9 https://doi.org/10.1021/nl3018115	journal	January 2012
Growth Pathways in Ultralow Temperature Ge Nucleation from Au Kim, B. J.; Wen, C. -Y.; Tersoff, J. Nano Letters, Vol. 12, Issue 11 https://doi.org/10.1021/nl303225a	journal	October 2012
Tunable Graphene–Silicon Heterojunctions for Ultrasensitive Photodetection An, Xiaohong; Liu, Fangze; Jung, Yung Joon Nano Letters, Vol. 13, Issue 3 https://doi.org/10.1021/nl303682j	journal	February 2013
In _x Ga _{1– x} As Nanowire Growth on Graphene: van der Waals Epitaxy Induced Phase Segregation Mohseni, Parsian K.; Behnam, Ashkan; Wood, Joshua D. Nano Letters, Vol. 13, Issue 3 https://doi.org/10.1021/nl304569d	journal	February 2013
Wafer-Scale Synthesis and Transfer of Graphene Films Lee, Youngbin; Bae, Sukang; Jang, Houk Nano Letters, Vol. 10, Issue 2 https://doi.org/10.1021/nl903272n	journal	February 2010
Remote epitaxy through graphene enables two-dimensional material-based layer transfer Kim, Yunjo; Cruz, Samuel S.; Lee, Kyusang Nature, Vol. 544, Issue 7650 https://doi.org/10.1038/nature22053	journal	April 2017
Wearable smart sensor systems integrated on soft contact lenses for wireless ocular diagnostics Kim, Joohee; Kim, Minji; Lee, Mi-Sun Nature Communications, Vol. 8, Issue 1 https://doi.org/10.1038/ncomms14997	journal	April 2017
Electrical contacts to two-dimensional semiconductors Allain, Adrien; Kang, Jiahao; Banerjee, Kaustav Nature Materials, Vol. 14, Issue 12 https://doi.org/10.1038/nmat4452	journal	November 2015
The origins and limits of metal–graphene junction resistance Xia, Fengnian; Perebeinos, Vasili; Lin, Yu-ming Nature Nanotechnology, Vol. 6, Issue 3 https://doi.org/10.1038/nnano.2011.6	journal	February 2011
Integration of bulk materials with two-dimensional materials for physical coupling and applications Bae, Sang-Hoon; Kum, Hyun; Kong, Wei Nature Materials, Vol. 18, Issue 6 https://doi.org/10.1038/s41563-019-0335-2	journal	May 2019
Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions Liu, Yuan; Guo, Jian; Zhu, Enbo Nature, Vol. 557, Issue 7707 https://doi.org/10.1038/s41586-018-0129-8	journal	May 2018
Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors Wang, Yan; Kim, Jong Chan; Wu, Ryan J. Nature, Vol. 568, Issue 7750 https://doi.org/10.1038/s41586-019-1052-3	journal	March 2019
Quantitative optical mapping of two-dimensional materials Jessen, Bjarke S.; Whelan, Patrick R.; Mackenzie, David M. A. Scientific Reports, Vol. 8, Issue 1 https://doi.org/10.1038/s41598-018-23922-1	journal	April 2018
Droplet heteroepitaxy of GaN quantum dots by metal-organic chemical vapor deposition Gherasimova, M.; Cui, G.; Jeon, S. -R. Applied Physics Letters, Vol. 85, Issue 12 https://doi.org/10.1063/1.1793343	journal	September 2004
Silver catalyzed ultrathin silicon nanowires grown by low-temperature chemical-vapor-deposition Wittemann, Joerg V.; Münchgesang, Wolfram; Senz, Stephan Journal of Applied Physics, Vol. 107, Issue 9 https://doi.org/10.1063/1.3393601	journal	May 2010
Metal-semiconductor-metal photodetectors based on graphene/ p -type silicon Schottky junctions An, Yanbin; Behnam, Ashkan; Pop, Eric Applied Physics Letters, Vol. 102, Issue 1 https://doi.org/10.1063/1.4773992	journal	January 2013
van der Waals epitaxy of Ge films on mica Littlejohn, A. J.; Xiang, Y.; Rauch, E. Journal of Applied Physics, Vol. 122, Issue 18 https://doi.org/10.1063/1.5000502	journal	November 2017
The growth and structure of gold and silver deposits formed by evaporation inside an electron microscope Pashley, D. W.; Stowell, M. J.; Jacobs, M. H. Philosophical Magazine, Vol. 10, Issue 103 https://doi.org/10.1080/14786436408224212	journal	July 1964
Direct resolution of surface atomic steps by transmission electron microscopy Cherns, D. Philosophical Magazine, Vol. 30, Issue 3 https://doi.org/10.1080/14786439808206580	journal	September 1974
Techniques for routine UHV in situ electron microscopy of growth processes of epitaxial thin films Takayanagi, K.; Yagi, K.; Kobayashi, K. Journal of Physics E: Scientific Instruments, Vol. 11, Issue 5 https://doi.org/10.1088/0022-3735/11/5/019	journal	May 1978
Controlling nanowire structures through real time growth studies Ross, Frances M. Reports on Progress in Physics, Vol. 73, Issue 11 https://doi.org/10.1088/0034-4885/73/11/114501	journal	October 2010
High yield of self-catalyzed GaAs nanowire arrays grown on silicon via gallium droplet positioning Plissard, S.; Larrieu, G.; Wallart, X. Nanotechnology, Vol. 22, Issue 27 https://doi.org/10.1088/0957-4484/22/27/275602	journal	May 2011
What are the possible moiré patterns of graphene on hexagonally packed surfaces? Universal solution for hexagonal coincidence lattices, derived by a geometric construction Zeller, Patrick; Günther, Sebastian New Journal of Physics, Vol. 16, Issue 8 https://doi.org/10.1088/1367-2630/16/8/083028	journal	August 2014
Suppression of intrinsic roughness in encapsulated graphene Thomsen, Joachim Dahl; Gunst, Tue; Gregersen, Søren Schou Physical Review B, Vol. 96, Issue 1 https://doi.org/10.1103/PhysRevB.96.014101	journal	July 2017
Superconducting pairing of topological surface states in bismuth selenide films on niobium Flötotto, David; Ota, Yuichi; Bai, Yang Science Advances, Vol. 4, Issue 4 https://doi.org/10.1126/sciadv.aar7214	journal	April 2018
Germanium Nanowire Growth Below the Eutectic Temperature Kodambaka, S.; Tersoff, J.; Reuter, M. C. Science, Vol. 316, Issue 5825 https://doi.org/10.1126/science.1139105	journal	May 2007
Kinetics of Individual Nucleation Events Observed in Nanoscale Vapor-Liquid-Solid Growth Kim, B. J.; Tersoff, J.; Kodambaka, S. Science, Vol. 322, Issue 5904 https://doi.org/10.1126/science.1163494	journal	November 2008
Formation of Compositionally Abrupt Axial Heterojunctions in Silicon-Germanium Nanowires Wen, C. -Y.; Reuter, M. C.; Bruley, J. Science, Vol. 326, Issue 5957 https://doi.org/10.1126/science.1178606	journal	November 2009
Oriented 2D Covalent Organic Framework Thin Films on Single-Layer Graphene Colson, J. W.; Woll, A. R.; Mukherjee, A. Science, Vol. 332, Issue 6026 https://doi.org/10.1126/science.1202747	journal	April 2011
Wafer-Scale Growth of Single-Crystal Monolayer Graphene on Reusable Hydrogen-Terminated Germanium Lee, J.-H.; Lee, E. K.; Joo, W.-J. Science, Vol. 344, Issue 6181, p. 286-289 https://doi.org/10.1126/science.1252268	journal	April 2014
Semiconductor Clusters, Nanocrystals, and Quantum Dots Alivisatos, A. P. Science, Vol. 271, Issue 5251, p. 933-937 https://doi.org/10.1126/science.271.5251.933	journal	February 1996
2D materials and van der Waals heterostructures Novoselov, K. S.; Mishchenko, A.; Carvalho, A. Science, Vol. 353, Issue 6298 https://doi.org/10.1126/science.aac9439	journal	July 2016
DIFFERENT GROWTH BEHAVIOR OF Ge , Al AND Sb ON GRAPHITE Xiao, Wende; Yan, Zhijun; Kushvaha, Sunil Singh Surface Review and Letters, Vol. 13, Issue 02n03 https://doi.org/10.1142/S0218625X06008025	journal	April 2006
Metals on Graphene: Interactions, Growth Morphology, and Thermal Stability Liu, Xiaojie; Wang, Cai-Zhuang; Hupalo, Myron Crystals, Vol. 3, Issue 1 https://doi.org/10.3390/cryst3010079	journal	January 2013