Epitaxial growth of ultraflat stanene with topological band inversion

Deng, Jialiang; Xia, Bingyu; Ma, Xiaochuan; Chen, Haoqi; Shan, Huan; Zhai, Xiaofang; Li, Bin; Zhao, Aidi; Xu, Yong; Duan, Wenhui; Zhang, Shou -Cheng; Wang, Bing; Hou, J. G.

doi:10.1038/s41563-018-0203-5

Title: Epitaxial growth of ultraflat stanene with topological band inversion

Journal Article · Mon Nov 05 00:00:00 EST 2018 · Nature Materials

DOI:https://doi.org/10.1038/s41563-018-0203-5· OSTI ID:1490654

^[1]; Xia, Bingyu ^[2]; Ma, Xiaochuan ^[1]; Chen, Haoqi ^[1]; Shan, Huan ^[1]; Zhai, Xiaofang ^[1]; Li, Bin ^[1];

^[1];

^[2]; Duan, Wenhui ^[2]; Zhang, Shou -Cheng ^[3];

^[1]; Hou, J. G. ^[1]

Univ. of Science and Technology of China, Hefei (China)
Tsinghua Univ., Beijing (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)
Stanford Univ., Stanford, CA (United States)

Here, two-dimensional (2D) topological materials, including quantum spin/anomalous Hall insulators, have attracted intense research efforts owing to their promise for applications ranging from low-power electronics and high-performance thermoelectrics to fault-tolerant quantum computation. One key challenge is to fabricate topological materials with a large energy gap for room-temperature use. Stanene—the tin counterpart of graphene—is a promising material candidate distinguished by its tunable topological states and sizeable bandgap. Recent experiments have successfully fabricated stanene, but none of them have yet observed topological states. Here we demonstrate the growth of high-quality stanene on Cu(111) by low-temperature molecular beam epitaxy. Importantly, we discovered an unusually ultraflat stanene showing an in-plane s–p band inversion together with a spin–orbit-coupling-induced topological gap (~0.3 eV) at the Γ point, which represents a foremost group-IV ultraflat graphene-like material displaying topological features in experiment. The finding of ultraflat stanene opens opportunities for exploring two-dimensional topological physics and device applications.

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Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC02-76SF00515

OSTI ID:: 1490654

Journal Information:: Nature Materials, Vol. 17, Issue 12; ISSN 1476-1122

Publisher:: Springer Nature - Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 213 works

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