Realizing an Epitaxial Decorated Stanene with an Insulating Bandgap

Zang, Yunyi; Jiang, Tian; Gong, Yan; Guan, Zhaoyong; Liu, Chong; Liao, Menghan; Zhu, Kejing; Li, Zhe; Wang, Lili; Li, Wei; Song, Canli; Zhang, Ding; Xu, Yong; He, Ke; Ma, Xucun; Zhang, Shou-Cheng; Xue, Qi-Kun

doi:10.1002/adfm.201802723

Title: Realizing an Epitaxial Decorated Stanene with an Insulating Bandgap

Journal Article · Sun Jul 01 00:00:00 EDT 2018 · Advanced Functional Materials

DOI:https://doi.org/10.1002/adfm.201802723· OSTI ID:1475572

Zang, Yunyi ^[1]; Jiang, Tian ^[2]; Gong, Yan ^[1]; Guan, Zhaoyong ^[1]; Liu, Chong ^[1]; Liao, Menghan ^[1]; Zhu, Kejing ^[1]; Li, Zhe ^[1]; Wang, Lili ^[3]; Li, Wei ^[3]; Song, Canli ^[3]; Zhang, Ding ^[3]; Xu, Yong ^[4];

^[3]; Ma, Xucun ^[3]; Zhang, Shou-Cheng ^[5]; Xue, Qi-Kun ^[3]

Tsinghua Univ., Beijing (China). State Key Lab. of Low Dimensional Quantum Physics, Dept. of Physics
Tsinghua Univ., Beijing (China). State Key Lab. of Low Dimensional Quantum Physics, Dept. of Physics; National Univ. of Defense Technology, Changsha (China). College of Optoelectronic Science and Engineering
Tsinghua Univ., Beijing (China). State Key Lab. of Low Dimensional Quantum Physics, Dept. of Physics; Collaborative Innovation Center of Quantum Matter, Beijing (China)
Tsinghua Univ., Beijing (China). State Key Lab. of Low Dimensional Quantum Physics, Dept. of Physics; RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama (Japan); Collaborative Innovation Center of Quantum Matter, Beijing (China)
Stanford Univ., CA (United States). Dept. of Physics

Abstract The exploration of intriguing topological quantum physics in stanene has attracted enormous interest but is challenged by lacking desirable material samples. The successful fabrication of monolayer stanene on PbTe(111) films with low‐temperature molecular beam epitaxy and thorough characterizations of its atomic and electronic structures are reported here. In situ angle‐resolved photoemission spectroscopy together with first‐principles calculations identify two hole bands of p _xy orbital with a spin‐orbit coupling induced band splitting and meanwhile reveal an automatic passivation of p _z orbital of stanene. Importantly, material properties are tuned by substrate engineering, realizing a decorated stanene sample with truly insulating bulk on Sr‐doped PbTe. This finding paves a road for studies of stanene‐based topological quantum effects and electronics.

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Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Natural Science Foundation of China (NSFC); Ministry of Science and Technology of China; Beijing Advanced Innovation Center for Future Chip (ICFC); Tsinghua University Initiative Scientific Research Program; National Thousand‐Young‐Talents Program

Grant/Contract Number:: 51661135024; 2017YFA0303303; AC02-76SF00515; DE‐AC02‐76SF00515

OSTI ID:: 1475572

Alternate ID(s):: OSTI ID: 1458580

Journal Information:: Advanced Functional Materials, Vol. 28, Issue 35; ISSN 1616-301X

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 49 works

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Title: Realizing an Epitaxial Decorated Stanene with an Insulating Bandgap

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