Epitaxial graphene-encapsulated surface reconstruction of Ge(110)

Campbell, Gavin P.; Kiraly, Brian; Jacobberger, Robert M.; Mannix, Andrew J.; Arnold, Michael S.; Hersam, Mark C.; Guisinger, Nathan P.; Bedzyk, Michael J.

doi:10.1103/PhysRevMaterials.2.044004

Title: Epitaxial graphene-encapsulated surface reconstruction of Ge(110)

Journal Article · Fri Apr 13 00:00:00 EDT 2018 · Physical Review Materials

DOI:https://doi.org/10.1103/PhysRevMaterials.2.044004· OSTI ID:1482106

Campbell, Gavin P. ^[1]; Kiraly, Brian ^[2]; Jacobberger, Robert M. ^[3]; Mannix, Andrew J. ^[2]; Arnold, Michael S. ^[3]; Hersam, Mark C. ^[1]; Guisinger, Nathan P. ^[4]; Bedzyk, Michael J. ^[1]

Northwestern Univ., Evanston, IL (United States)
Northwestern Univ., Evanston, IL (United States); Argonne National Lab. (ANL), Argonne, IL (United States)
Univ. of Wisconsin, Madison, WI (United States)
Argonne National Lab. (ANL), Argonne, IL (United States)

Understanding and engineering the properties of crystalline surfaces has been critical in achieving functional electronics at the nanoscale. Employing scanning tunneling microscopy, surface x-ray diffraction, and high-resolution x-ray reflectivity experiments, we present a thorough study of epitaxial graphene (EG)/Ge(110) and report a Ge(110) "6 x 2" reconstruction stabilized by the presence of epitaxial graphene unseen in group-IV semiconductor surfaces. As a result, X-ray studies reveal that graphene resides atop the surface reconstruction with a 0.34 nm van der Waals (vdW) gap and provides protection from ambient degradation.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); US Department of the Navy, Office of Naval Research (ONR); Air Force Research Laboratory (AFRL), Air Force Office of Scientific Research (AFOSR); National Science Foundation (NSF)

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1482106

Alternate ID(s):: OSTI ID: 1433027

Journal Information:: Physical Review Materials, Vol. 2, Issue 4; ISSN 2475-9953

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 19 works

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