InxGa1–xAs Nanowire Growth on Graphene: van der Waals Epitaxy Induced Phase Segregation

Mohseni, Parsian K.; Behnam, Ashkan; Wood, Joshua D.; English, Christopher D.; Lyding, Joseph W.; Pop, Eric; Li, Xiuling

doi:10.1021/nl304569d

In_xGa_1–xAs Nanowire Growth on Graphene: van der Waals Epitaxy Induced Phase Segregation

Journal Article · Tue Feb 19 00:00:00 EST 2013 · Nano Letters

DOI:https://doi.org/10.1021/nl304569d· OSTI ID:1875520

Mohseni, Parsian K. ^[1]; Behnam, Ashkan ^[2]; Wood, Joshua D. ^[2]; English, Christopher D. ^[2]; Lyding, Joseph W. ^[2]; Pop, Eric ^[2]; Li, Xiuling ^[2]

Univ. of Illinois at Urbana-Champaign, IL (United States); University of Illinois
Univ. of Illinois at Urbana-Champaign, IL (United States)

The growth of high-density arrays of vertically oriented, single crystalline InAs NWs on graphene surfaces are realized through the van der Waals (vdW) epitaxy mechanism by metalorganic chemical vapor deposition (MOCVD). However, the growth of InGaAs NWs on graphene results in spontaneous phase separation starting from the beginning of growth, yielding a well-defined InAs–In_xGa_1–xAs (0.2 < x < 1) core–shell structure. The core–shell structure then terminates abruptly after about 2 μm in height, and axial growth of uniform composition In_xGa_1–xAs takes place without a change in the NW diameter. The In_xGa_1–xAs shell composition changes as a function of indium flow, but the core and shell thicknesses and the onset of nonsegregated In_xGa_1–xAs axial segment are independent of indium composition. In contrast, no InGaAs phase segregation has been observed when growing on MoS₂, another two-dimensional (2D) layered material, or via the Au-assisted vapor–liquid–solid (VLS) mechanism on graphene. This spontaneous phase segregation phenomenon is elucidated as a special case of van der Waals epitaxy on 2D sheets. Here, considering the near lattice matched registry between InAs and graphene, InGaAs is forced to self-organize into InAs core and InGaAs shell segments since the lack of dangling bonds on graphene does not allow strain sharing through elastic deformation between InGaAs and graphene.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of Illinois at Urbana-Champaign, IL (United States)

Sponsoring Organization:: Air Force Office of Scientific Research (AFOSR); National Science Foundation (NSF); Office of Naval Research (ONR); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division

Grant/Contract Number:: FG02-07ER46453; FG02-07ER46471

OSTI ID:: 1875520

Journal Information:: Nano Letters, Journal Name: Nano Letters Journal Issue: 3 Vol. 13; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

References (38)

Van der Waals epitaxy—a new epitaxial growth method for a highly lattice-mismatched system Koma, Atsushi Thin Solid Films, Vol. 216, Issue 1 https://doi.org/10.1016/0040-6090(92)90872-9	journal	August 1992
Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (111) GaAs Regolin, I.; Sudfeld, D.; Lüttjohann, S. Journal of Crystal Growth, Vol. 298 https://doi.org/10.1016/j.jcrysgro.2006.10.122	journal	January 2007
Characteristics of Strain-Induced In _x Ga _{1– x} As Nanowires Grown on Si(111) Substrates Shin, Jae Cheol; Choi, Kyoung Jin; Kim, Do Yang Crystal Growth & Design, Vol. 12, Issue 6 https://doi.org/10.1021/cg300210h	journal	May 2012
Composition and Phase Tuned InGaAs Alloy Nanowires Jung, Chan Su; Kim, Han Sung; Jung, Gyeong Bok The Journal of Physical Chemistry C, Vol. 115, Issue 16 https://doi.org/10.1021/jp2003276	journal	April 2011
Epitaxial III−V Nanowires on Silicon Mårtensson, Thomas; Svensson, C. Patrik T.; Wacaser, Brent A. Nano Letters, Vol. 4, Issue 10 https://doi.org/10.1021/nl0487267	journal	October 2004
Core/Multishell Nanowire Heterostructures as Multicolor, High-Efficiency Light-Emitting Diodes Qian, Fang; Gradečak, Silvija; Li, Yat Nano Letters, Vol. 5, Issue 11 https://doi.org/10.1021/nl051689e	journal	November 2005
Morphology- and Orientation-Controlled Gallium Arsenide Nanowires on Silicon Substrates Ihn, Soo-Ghang; Song, Jong-In; Kim, Tae-Wook Nano Letters, Vol. 7, Issue 1 https://doi.org/10.1021/nl0618795	journal	January 2007
Effects of Polycrystalline Cu Substrate on Graphene Growth by Chemical Vapor Deposition Wood, Joshua D.; Schmucker, Scott W.; Lyons, Austin S. Nano Letters, Vol. 11, Issue 11 https://doi.org/10.1021/nl201566c	journal	November 2011
Scanning Tunneling Microscopy Study and Nanomanipulation of Graphene-Coated Water on Mica He, Kevin T.; Wood, Joshua D.; Doidge, Gregory P. Nano Letters, Vol. 12, Issue 6 https://doi.org/10.1021/nl202613t	journal	May 2012
In _x Ga _{1- x} As Nanowires on Silicon: One-Dimensional Heterogeneous Epitaxy, Bandgap Engineering, and Photovoltaics Shin, Jae Cheol; Kim, Kyou Hyun; Yu, Ki Jun Nano Letters, Vol. 11, Issue 11 https://doi.org/10.1021/nl202676b	journal	November 2011
van der Waals Epitaxy of InAs Nanowires Vertically Aligned on Single-Layer Graphene Hong, Young Joon; Lee, Wi Hyoung; Wu, Yaping Nano Letters, Vol. 12, Issue 3 https://doi.org/10.1021/nl204109t	journal	February 2012
High Quality GaAs Nanowires Grown on Glass Substrates Dhaka, Veer; Haggren, Tuomas; Jussila, Henri Nano Letters, Vol. 12, Issue 4 https://doi.org/10.1021/nl204314z	journal	March 2012
van der Waals Epitaxy of MoS₂ Layers Using Graphene As Growth Templates Shi, Yumeng; Zhou, Wu; Lu, Ang-Yu Nano Letters, Vol. 12, Issue 6, p. 2784-2791 https://doi.org/10.1021/nl204562j	journal	May 2012
Vertically Aligned GaAs Nanowires on Graphite and Few-Layer Graphene: Generic Model and Epitaxial Growth Munshi, A. Mazid; Dheeraj, Dasa L.; Fauske, Vidar T. Nano Letters, Vol. 12, Issue 9 https://doi.org/10.1021/nl3018115	journal	January 2012
Phase Separation Induced by Au Catalysts in Ternary InGaAs Nanowires Guo, Ya-Nan; Xu, Hong-Yi; Auchterlonie, Graeme J. Nano Letters, Vol. 13, Issue 2 https://doi.org/10.1021/nl304237b	journal	January 2013
Growth and Characterization of GaAs Nanowires on Carbon Nanotube Composite Films: Toward Flexible Nanodevices Mohseni, Parsian K.; Lawson, Gregor; Couteau, Christophe Nano Letters, Vol. 8, Issue 11 https://doi.org/10.1021/nl802003m	journal	October 2008
Single GaAs/GaAsP Coaxial Core−Shell Nanowire Lasers Hua, Bin; Motohisa, Junichi; Kobayashi, Yasunori Nano Letters, Vol. 9, Issue 1 https://doi.org/10.1021/nl802636b	journal	January 2009
GaAs Core−Shell Nanowires for Photovoltaic Applications Czaban, Josef A.; Thompson, David A.; LaPierre, Ray R. Nano Letters, Vol. 9, Issue 1 https://doi.org/10.1021/nl802700u	journal	January 2009
GaAs/AlGaAs Core Multishell Nanowire-Based Light-Emitting Diodes on Si Tomioka, Katsuhiro; Motohisa, Junichi; Hara, Shinjiroh Nano Letters, Vol. 10, Issue 5 https://doi.org/10.1021/nl9041774	journal	May 2010
Clean Transfer of Graphene for Isolation and Suspension Lin, Yung-Chang; Jin, Chuanhong; Lee, Jung-Chi ACS Nano, Vol. 5, Issue 3 https://doi.org/10.1021/nn200105j	journal	February 2011
Toward Clean and Crackless Transfer of Graphene Liang, Xuelei; Sperling, Brent A.; Calizo, Irene ACS Nano, Vol. 5, Issue 11 https://doi.org/10.1021/nn203377t	journal	October 2011
Synthesis and Characterizations of Ternary InGaAs Nanowires by a Two-Step Growth Method for High-Performance Electronic Devices Hou, Jared J.; Han, Ning; Wang, Fengyun ACS Nano, Vol. 6, Issue 4 https://doi.org/10.1021/nn300966j	journal	March 2012
Heterogeneous Integration of InGaAs Nanowires on the Rear Surface of Si Solar Cells for Efficiency Enhancement Shin, Jae Cheol; Mohseni, Parsian K.; Yu, Ki Jun ACS Nano, Vol. 6, Issue 12 https://doi.org/10.1021/nn304784y	journal	November 2012
Epitaxial growth of InP nanowires on germanium Bakkers, Erik P. A. M.; van Dam, Jorden A.; De Franceschi, Silvano Nature Materials, Vol. 3, Issue 11 https://doi.org/10.1038/nmat1235	journal	October 2004
Graphene transistors Schwierz, Frank Nature Nanotechnology, Vol. 5, Issue 7 https://doi.org/10.1038/nnano.2010.89	journal	May 2010
Graphene photonics and optoelectronics Bonaccorso, F.; Sun, Z.; Hasan, T. Nature Photonics, Vol. 4, Issue 9 https://doi.org/10.1038/nphoton.2010.186	journal	August 2010
Electronic structure of piezoelectric double-barrier InAs/InP/InAs/InP/InAs (111) nanowires Zervos, Matthew; Feiner, Lou-Fé Journal of Applied Physics, Vol. 95, Issue 1 https://doi.org/10.1063/1.1630358	journal	January 2004
Equilibrium limits of coherency in strained nanowire heterostructures Ertekin, Elif; Greaney, P. A.; Chrzan, D. C. Journal of Applied Physics, Vol. 97, Issue 11 https://doi.org/10.1063/1.1903106	journal	June 2005
Critical diameter for III-V nanowires grown on lattice-mismatched substrates Chuang, Linus C.; Moewe, Michael; Chase, Chris Applied Physics Letters, Vol. 90, Issue 4 https://doi.org/10.1063/1.2436655	journal	January 2007
Silicon nanowire solar cells Tsakalakos, L.; Balch, J.; Fronheiser, J. Applied Physics Letters, Vol. 91, Issue 23, 233117 https://doi.org/10.1063/1.2821113	journal	December 2007
Gallium arsenide p-i-n radial structures for photovoltaic applications Colombo, C.; Heiβ, M.; Grätzel, M. Applied Physics Letters, Vol. 94, Issue 17, 173108 https://doi.org/10.1063/1.3125435	journal	April 2009
Vertically aligned ZnO nanostructures grown on graphene layers Kim, Yong-Jin; Lee, Jae-Hyun; Yi, Gyu-Chul Applied Physics Letters, Vol. 95, Issue 21 https://doi.org/10.1063/1.3266836	journal	November 2009
Molecular beam epitaxy growth of high quality p-doped SnS van der Waals epitaxy on a graphene buffer layer Wang, W.; Leung, K. K.; Fong, W. K. Journal of Applied Physics, Vol. 111, Issue 9 https://doi.org/10.1063/1.4709732	journal	May 2012
High compositional homogeneity in In-rich InGaAs nanowire arrays on nanoimprinted SiO ₂ /Si (111) Hertenberger, S.; Funk, S.; Vizbaras, K. Applied Physics Letters, Vol. 101, Issue 4 https://doi.org/10.1063/1.4738769	journal	July 2012
GaP/GaAsP/GaP core–multishell nanowire heterostructures on (111) silicon Mohseni, P. K.; Maunders, C.; Botton, G. A. Nanotechnology, Vol. 18, Issue 44 https://doi.org/10.1088/0957-4484/18/44/445304	journal	October 2007
Monolithic GaAs/InGaP nanowire light emitting diodes on silicon Svensson, C. Patrik T.; Mårtensson, Thomas; Trägårdh, Johanna Nanotechnology, Vol. 19, Issue 30 https://doi.org/10.1088/0957-4484/19/30/305201	journal	June 2008
Hybrid GaAs-Nanowire–Carbon-Nanotube Flexible Photovoltaics Mohseni, Parsian K.; Lawson, Gregor; Adronov, Alex IEEE Journal of Selected Topics in Quantum Electronics, Vol. 17, Issue 4 https://doi.org/10.1109/JSTQE.2010.2048097	journal	July 2011
Electric Field Effect in Atomically Thin Carbon Films Novoselov, K. S. Science, Vol. 306, Issue 5696, p. 666-669 https://doi.org/10.1126/science.1102896	journal	October 2004

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Graphitic platform for self-catalysed InAs nanowires growth by molecular beam epitaxy Zhuang, Qian D.; Anyebe, Ezekiel A.; Sanchez, Ana M. Nanoscale Research Letters, Vol. 9, Issue 1 https://doi.org/10.1186/1556-276x-9-321	journal	June 2014
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Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
InAs
InGaAs
MOCVD
epitaxy
graphene
indium arsenide
nanowire
phase segregation
phase separation
physical and chemical processes
substrates
two dimensional materials
van der Waals epitaxy