Defect-engineered epitaxial VO 2±δ in strain engineering of heterogeneous soft crystals

Wang, Yiping; Sun, Xin; Chen, Zhizhong; Cai, Zhonghou; Zhou, Hua; Lu, Toh-Ming; Shi, Jian

doi:10.1126/sciadv.aar3679

Title: Defect-engineered epitaxial VO _2±δ in strain engineering of heterogeneous soft crystals

Journal Article · Tue May 01 00:00:00 EDT 2018 · Science Advances

DOI:https://doi.org/10.1126/sciadv.aar3679· OSTI ID:1468627

^[1];

^[2]; Chen, Zhizhong ^[1]; Cai, Zhonghou ^[3]; Zhou, Hua ^[3]; Lu, Toh-Ming ^[2]; Shi, Jian ^[1]

Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Materials Science and Engineering
Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Physics, Applied Physics, and Astronomy
Argonne National Lab. (ANL), Argonne, IL (United States). X-ray Science Division

The success of strain engineering has made a step further for the enhancement of material properties and the introduction of new physics, especially with the discovery of the critical roles of strain in the heterogeneous interface between two dissimilar materials (for example, FeSe/SrTiO₃). On the other hand, the strain manipulation has been limited to chemical epitaxy and nanocomposites that, to a large extent, limit the possible material systems that can be explored. By defect engineering, we obtained, for the first time, dense three-dimensional strongly correlated VO_{2±$$\delta$$} epitaxial nanoforest arrays that can be used as a novel "substrate" for dynamic strain engineering, due to its metal-insulator transition. The highly dense nanoforest is promising for the possible realization of bulk strain similar to the effect of nanocomposites. By growing single-crystalline halide perovskite CsPbBr₃, a mechanically soft and emerging semiconducting material, onto the VO_{2±$$\delta$$}, a heterogeneous interface is created that can entail a ~1% strain transfer upon the metal-insulator transition of VO_{2±$$\delta$$}. This strain is large enough to trigger a structural phase transition featured by PbX₆ octahedral tilting along with a modification of the photoluminescence energy landscape in halide perovskite. Our findings suggest a promising strategy of dynamic strain engineering in a heterogeneous interface carrying soft and strain-sensitive semiconductors that can happen at a larger volumetric value surpassing the conventional critical thickness limit.

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Research Organization:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Organization:: Rensselaer Polytechnic Institute; Air Force Research Laboratory (AFRL). Air Force Office of Scientific Research (AFOSR); National Science Foundation (NSF); USDOE

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1468627

Journal Information:: Science Advances, Vol. 4, Issue 5; ISSN 2375-2548

Publisher:: AAASCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 39 works

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