Digital Tuning of the Transition Temperature of Epitaxial VO 2 Thin Films on MgF 2 Substrates by Strain Engineering

Howard, Sebastian A.; Evlyukhin, Egor; Páez Fajardo, Galo; Paik, Hanjong; Schlom, Darrell G.; Piper, Louis F. J.

doi:10.1002/admi.202001790

Title: Digital Tuning of the Transition Temperature of Epitaxial VO ₂ Thin Films on MgF ₂ Substrates by Strain Engineering

Journal Article · Tue Mar 09 00:00:00 EST 2021 · Advanced Materials Interfaces

DOI:https://doi.org/10.1002/admi.202001790· OSTI ID:1804201

Howard, Sebastian A. ^[1];

^[1];

^[2];

^[3]; Piper, Louis F. J. ^[4]

Department of Physics, Applied Physics and Astronomy Binghamton University Binghamton New York 13905 USA
Departments of Material Science and Engineering Cornell University 210 Bard Hall Ithaca NY 14853 USA, Platform for the Accelerated Realization Analysis and Discovery of Interface Materials Cornell University 343 Campus RD Ithaca NY 14853 USA
Departments of Material Science and Engineering Cornell University 210 Bard Hall Ithaca NY 14853 USA, Kavli Institute at Cornell for Nanoscale Science 420 Physical Sciences Building Ithaca Ithaca NY 14853 USA
Department of Physics, Applied Physics and Astronomy Binghamton University Binghamton New York 13905 USA, WMG University of Warwick Coventry CV4 7AL UK

Abstract Straining the vanadium dimers along the rutile c ‐axis can be used to tune the metal‐to‐insulator transition (MIT) of VO ₂ but has thus far been limited to TiO ₂ substrates. In this work VO ₂ /MgF ₂ epitaxial films are grown via molecular beam epitaxy (MBE) to strain engineer the transition temperature ( T _MIT ). First, growth parameters are optimized by varying the synthesis temperature of the MgF ₂ (001) substrate ( T _S ) using a combination of X‐ray diffraction techniques, temperature dependent transport, and soft X‐ray photoelectron spectroscopy. It is determined that T _S values greater than 350 °C induce Mg and F interdiffusion and ultimately the relaxation of the VO ₂ layer. Using the optimized growth temperature, VO ₂ /MgF ₂ (101) and (110) films are then synthesized. The three film orientations display MITs with transition temperatures in the range of 15–60 °C through precise strain engineering.

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Sponsoring Organization:: USDOE

OSTI ID:: 1804201

Journal Information:: Advanced Materials Interfaces, Journal Name: Advanced Materials Interfaces Vol. 8 Journal Issue: 9; ISSN 2196-7350

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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