Observation of electron states of small period artificial graphene in nano-patterned GaAs quantum wells
- Columbia Univ., New York, NY (United States). Dept. of Applied Physics and Applied Mathematics
- Columbia Univ., New York, NY (United States). Dept. of Physics
- Columbia Univ., New York, NY (United States). Dept. of Applied Physics and Applied Mathematics, and Dept. of Physics
- Istituto Italiano di Tecnologia, Genova (Italy). Graphene Lab.; Istituto Nanoscienze-CNR and Scuola Normale Superiore, Pisa (Italy). National Enterprise for nanoScience and nanoTechnology (NEST)
- Purdue Univ., West Lafayette, IN (United States). Birck Nanotechnology Center, Dept. of Physics and Astronomy, School of Materials Engineering and School of Electrical and Computer Engineering
- Purdue Univ., West Lafayette, IN (United States). Birck Nanotechnology Center, School of Materials Engineering
- Princeton Univ., NJ (United States). Dept. of Electrical Engineering
Engineered honeycomb lattices, called artificial graphene (AG), are tunable platforms for the study of novel electronic states related to Dirac physics. Here in this work, we report the achievement of electronic bands of the honeycomb topology with the period as low as 40 nm on the nano-patterned modulation-doped AlGaAs/GaAs quantum wells. Resonant inelastic light scattering spectra reveal peaks which are interpreted as combined electronic transitions between subbands of the quantum well confinement with a change in the AG band index. Spectra lineshapes are explained by joint density of states obtained from the calculated AG electron band structures. These results provide a basis for further advancements in AG physics.
- Research Organization:
- Columbia Univ., New York, NY (United States)
- Sponsoring Organization:
- USDOE; National Science Foundation (NSF); Italian Ministry of Research (MIUR); European Union (EU). European Graphene Flagship
- Grant/Contract Number:
- SC0010695; SC0006671
- OSTI ID:
- 1467886
- Alternate ID(s):
- OSTI ID: 1323994
- Journal Information:
- Applied Physics Letters, Vol. 109, Issue 11; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Emerging many-body effects in semiconductor artificial graphene with low disorder
|
journal | August 2018 |
New topological states in HgTe quantum wells from defect patterning
|
journal | January 2018 |
Experimental observation of Dirac cones in artificial graphene lattices
|
journal | November 2020 |
Similar Records
Observation of Flat Bands in Gated Semiconductor Artificial Graphene
Emerging many-body effects in semiconductor artificial graphene with low disorder