Observation of Flat Bands in Gated Semiconductor Artificial Graphene
- Nanjing Univ. (China); Columbia Univ., New York, NY (United States)
- Columbia Univ., New York, NY (United States)
- Istituto Italiano di Tecnologia, Genova (Italy)
- Princeton Univ., NJ (United States)
- Purdue Univ., West Lafayette, IN (United States)
Flat bands near M points in the Brillouin zone are key features of honeycomb symmetry in artificial graphene (AG) where electrons may condense into novel correlated phases. Here we report the observation of van Hove singularity doublet of AG in GaAs quantum well transistors, which presents the evidence of flat bands in semiconductor AG. Two emerging peaks in photoluminescence spectra tuned by backgate voltages probe the singularity doublet of AG flat bands and demonstrate their accessibility to the Fermi level. As the Fermi level crosses the doublet, the spectra display dramatic stability against electron density, indicating interplays between electron-electron interactions and honeycomb symmetry. Our results provide a new flexible platform to explore intriguing flat band physics.
- Research Organization:
- Purdue Univ., West Lafayette, IN (United States); Columbia Univ., New York, NY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- Grant/Contract Number:
- SC0006671; SC0010695
- OSTI ID:
- 1850951
- Journal Information:
- Physical Review Letters, Vol. 126, Issue 10; ISSN 0031-9007
- Publisher:
- American Physical Society (APS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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