Revealing the Bonding Environment of Zn in ALD Zn(O,S) Buffer Layers through X-ray Absorption Spectroscopy

Dadlani, Anup; Acharya, Shinjita; Trejo, Orlando; Nordlund, Dennis; Peron, Mirco; Razavi, Javad; Berto, Filippo; Prinz, Fritz B.; Torgersen, Jan

doi:10.1021/acsami.7b06728

Title: Revealing the Bonding Environment of Zn in ALD Zn(O,S) Buffer Layers through X-ray Absorption Spectroscopy

Journal Article · Mon Oct 30 00:00:00 EDT 2017 · ACS Applied Materials and Interfaces

DOI:https://doi.org/10.1021/acsami.7b06728· OSTI ID:1463312

Dadlani, Anup ^[1]; Acharya, Shinjita ^[1]; Trejo, Orlando ^[1]; Nordlund, Dennis ^[2]; Peron, Mirco ^[3]; Razavi, Javad ^[3]; Berto, Filippo ^[3]; Prinz, Fritz B. ^[1];

^[4]

Stanford Univ., Stanford, CA (United States)
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Norwegian Univ. of Science and Technology, Trondheim (Norway)
Stanford Univ., Stanford, CA (United States); Norwegian Univ. of Science and Technology, Trondheim (Norway)

Zn(O,S) buffer layer electronic configuration is determined by its composition and thickness, tunable through atomic layer deposition. The Zn K and L-edges in the X-ray absorption near edge structure verify ionicity and covalency changes with S content. A high intensity shoulder in the Zn K-edge indicates strong Zn 4s hybridized states and a preferred c-axis orientation. 2–3 nm thick films with low S content show a subdued shoulder showing less contribution from Zn 4s hybridization. Here, a lower energy shift with film thickness suggests a decreasing bandgap. Further, ZnSO₄ forms at substrate interfaces, which may be detrimental for device performance.

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Research Organization:: SLAC National Accelerator Lab., Menlo Park, CA (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC02-76SF00515; J3505-N20

OSTI ID:: 1463312

Journal Information:: ACS Applied Materials and Interfaces, Vol. 9, Issue 45; ISSN 1944-8244

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 15 works

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References (21)

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36 MATERIALS SCIENCE
atomic layer deposition (ALD)
buffer layers
oxysulfide films
X-ray absorption near edge structure (XANES)
Zn(O
S)

Title: Revealing the Bonding Environment of Zn in ALD Zn(O,S) Buffer Layers through X-ray Absorption Spectroscopy

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