Enhancement-mode two-channel triple quantum dot from an undoped Si/Si0.8Ge0.2 quantum well hetero-structure

Studenikin, S. A.; Gaudreau, L.; Kataoka, K.; Austing, D. G.; Sachrajda, A. S.

doi:10.1063/1.5023596

Title: Enhancement-mode two-channel triple quantum dot from an undoped Si/Si_0.8Ge_0.2 quantum well hetero-structure

Journal Article · Mon Jun 04 00:00:00 EDT 2018 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5023596· OSTI ID:1457184

^[1]; Gaudreau, L. ^[1]; Kataoka, K. ^[2]; Austing, D. G. ^[1]; Sachrajda, A. S. ^[1]

National Research Council of Canada, Ottawa, ON (Canada)
National Research Council of Canada, Ottawa, ON (Canada); Tohoku Univ., Miyagi (Japan)

Here, we demonstrate coupled triple dot operation and charge sensing capability for the recently introduced quantum dot technology employing undoped Si/Si_0.8Ge_0.2 hetero-structures which also incorporate a single metal-gate layer to simplify fabrication. Si/SiGe hetero-structures with a Ge concentration of 20% rather than the more usual 30% typically encountered offer higher electron mobility. The devices consist of two in-plane parallel electron channels that host a double dot in one channel and a single dot in the other channel. In a device where the channels are sufficiently close a triple dot in a triangular configuration is induced leading to regions in the charge stability diagram where three charge-addition lines of different slope approach each other and anti-cross. In a device where the channels are further apart, the single dot charge-senses the double dot with relative change of ~2% in the sensor current.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1457184

Report Number(s):: SAND-2017-13809J; 659682

Journal Information:: Applied Physics Letters, Vol. 112, Issue 23; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 6 works

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References (48)

Capacitively induced high mobility two-dimensional electron gas in undoped Si∕Si1−xGex heterostructures with atomic-layer-deposited dielectric Lu, T. M.; Liu, J.; Kim, J. Applied Physics Letters, Vol. 90, Issue 18 https://doi.org/10.1063/1.2736273	journal	April 2007
A reconfigurable gate architecture for Si/SiGe quantum dots Zajac, D. M.; Hazard, T. M.; Mi, X. Applied Physics Letters, Vol. 106, Issue 22 https://doi.org/10.1063/1.4922249	journal	June 2015
Second-Harmonic Coherent Driving of a Spin Qubit in a Si/SiGe Quantum Dot Scarlino, P.; Kawakami, E.; Ward, D. R. Physical Review Letters, Vol. 115, Issue 10 https://doi.org/10.1103/PhysRevLett.115.106802	journal	September 2015
Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells Melnikov, M. Yu.; Dolgopolov, V. T.; Shashkin, A. A. Journal of Applied Physics, Vol. 122, Issue 22 https://doi.org/10.1063/1.4991545	journal	December 2017
Enhancement-mode buried strained silicon channel quantum dot with tunable lateral geometry Lu, T. M.; Bishop, N. C.; Pluym, T. Applied Physics Letters, Vol. 99, Issue 4 https://doi.org/10.1063/1.3615288	journal	July 2011
Dressed photon-orbital states in a quantum dot: Intervalley spin resonance Scarlino, P.; Kawakami, E.; Jullien, T. Physical Review B, Vol. 95, Issue 16 https://doi.org/10.1103/PhysRevB.95.165429	journal	April 2017
Fabrication of quantum dots in undoped Si/Si _0.8 Ge _0.2 heterostructures using a single metal-gate layer Lu, T. M.; Gamble, J. K.; Muller, R. P. Applied Physics Letters, Vol. 109, Issue 9 https://doi.org/10.1063/1.4961889	journal	August 2016
High-mobility Si and Ge structures Schäffler, Friedrich Semiconductor Science and Technology, Vol. 12, Issue 12 https://doi.org/10.1088/0268-1242/12/12/001	journal	December 1997
Gate fidelity and coherence of an electron spin in an Si/SiGe quantum dot with micromagnet Kawakami, Erika; Jullien, Thibaut; Scarlino, Pasquale Proceedings of the National Academy of Sciences, Vol. 113, Issue 42 https://doi.org/10.1073/pnas.1603251113	journal	October 2016
A fault-tolerant addressable spin qubit in a natural silicon quantum dot Takeda, Kenta; Kamioka, Jun; Otsuka, Tomohiro Science Advances, Vol. 2, Issue 8 https://doi.org/10.1126/sciadv.1600694	journal	August 2016
A triangular triple quantum dot with tunable tunnel couplings Noiri, A.; Kawasaki, K.; Otsuka, T. Semiconductor Science and Technology, Vol. 32, Issue 8 https://doi.org/10.1088/1361-6641/aa7596	journal	July 2017
Resonantly driven CNOT gate for electron spins Zajac, D. M.; Sigillito, A. J.; Russ, M. Science, Vol. 359, Issue 6374 https://doi.org/10.1126/science.aao5965	journal	December 2017
Circuit quantum electrodynamics architecture for gate-defined quantum dots in silicon Mi, X.; Cady, J. V.; Zajac, D. M. Applied Physics Letters, Vol. 110, Issue 4 https://doi.org/10.1063/1.4974536	journal	January 2017
Coherent singlet-triplet oscillations in a silicon-based double quantum dot Maune, B. M.; Borselli, M. G.; Huang, B. Nature, Vol. 481, Issue 7381 https://doi.org/10.1038/nature10707	journal	January 2012
Silicon comes back Schreiber, Lars R.; Bluhm, Hendrik Nature Nanotechnology, Vol. 9, Issue 12 https://doi.org/10.1038/nnano.2014.249	journal	October 2014
Electron transport through silicon serial triple quantum dots Yamahata, Gento; Tsuchiya, Yoshishige; Mizuta, Hiroshi Solid-State Electronics, Vol. 53, Issue 7 https://doi.org/10.1016/j.sse.2009.03.009	journal	July 2009
Capacitance evaluation of compact silicon triple quantum dots by simultaneous gate voltage sweeping Uchida, Takafumi; Jo, Mingyu; Tsurumaki-Fukuchi, Atsushi Journal of Applied Physics, Vol. 120, Issue 23 https://doi.org/10.1063/1.4972197	journal	December 2016
Coherent manipulation of valley states at multiple charge configurations of a silicon quantum dot device Schoenfield, Joshua S.; Freeman, Blake M.; Jiang, HongWen Nature Communications, Vol. 8, Issue 1 https://doi.org/10.1038/s41467-017-00073-x	journal	July 2017
The three dimensionality of triple quantum dot stability diagrams Rogge, M. C.; Haug, R. J. New Journal of Physics, Vol. 11, Issue 11 https://doi.org/10.1088/1367-2630/11/11/113037	journal	November 2009
Mobility enhancement of strained Si by optimized SiGe/Si/SiGe structures Huang, S. -H.; Lu, T. -M.; Lu, S. -C. Applied Physics Letters, Vol. 101, Issue 4 https://doi.org/10.1063/1.4739513	journal	July 2012
Electron transport through double quantum dots van der Wiel, W. G.; De Franceschi, S.; Elzerman, J. M. Reviews of Modern Physics, Vol. 75, Issue 1 https://doi.org/10.1103/RevModPhys.75.1	journal	December 2002
Charge Relaxation in a Single-Electron $Si / SiGe$ Double Quantum Dot Wang, K.; Payette, C.; Dovzhenko, Y. Physical Review Letters, Vol. 111, Issue 4 https://doi.org/10.1103/PhysRevLett.111.046801	journal	July 2013
Strong coupling of a single electron in silicon to a microwave photon Mi, X.; Cady, J. V.; Zajac, D. M. Science, Vol. 355, Issue 6321 https://doi.org/10.1126/science.aal2469	journal	December 2016
Quantum Spintronics: Engineering and Manipulating Atom-Like Spins in Semiconductors Awschalom, D. D.; Bassett, L. C.; Dzurak, A. S. Science, Vol. 339, Issue 6124 https://doi.org/10.1126/science.1231364	journal	March 2013
State-conditional coherent charge qubit oscillations in a Si/SiGe quadruple quantum dot Ward, Daniel R.; Kim, Dohun; Savage, Donald E. npj Quantum Information, Vol. 2, Issue 1 https://doi.org/10.1038/npjqi.2016.32	journal	October 2016
Isotopically enhanced triple-quantum-dot qubit Eng, Kevin; Ladd, Thaddeus D.; Smith, Aaron Science Advances, Vol. 1, Issue 4 https://doi.org/10.1126/sciadv.1500214	journal	May 2015
Reduced Sensitivity to Charge Noise in Semiconductor Spin Qubits via Symmetric Operation Reed, M. D.; Maune, B. M.; Andrews, R. W. Physical Review Letters, Vol. 116, Issue 11 https://doi.org/10.1103/PhysRevLett.116.110402	journal	March 2016
Two-axis control of a singlet-triplet qubit with an integrated micromagnet Wu, X.; Ward, D. R.; Prance, J. R. Proceedings of the National Academy of Sciences, Vol. 111, Issue 33 https://doi.org/10.1073/pnas.1412230111	journal	August 2014
A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9% Yoneda, Jun; Takeda, Kenta; Otsuka, Tomohiro Nature Nanotechnology, Vol. 13, Issue 2 https://doi.org/10.1038/s41565-017-0014-x	journal	December 2017
Temperature dependence of DC transport characteristics for a two-dimensional electron gas in an undoped Si/SiGe heterostructure Chou, Kuan-Yu; Hsu, Nai-Wen; Su, Yi-Hsin Applied Physics Letters, Vol. 112, Issue 8 https://doi.org/10.1063/1.5018636	journal	February 2018
Silicon quantum electronics Zwanenburg, Floris A.; Dzurak, Andrew S.; Morello, Andrea Reviews of Modern Physics, Vol. 85, Issue 3 https://doi.org/10.1103/RevModPhys.85.961	journal	July 2013
Stability Diagram of a Few-Electron Triple Dot Gaudreau, L.; Studenikin, S. A.; Sachrajda, A. S. Physical Review Letters, Vol. 97, Issue 3 https://doi.org/10.1103/PhysRevLett.97.036807	journal	July 2006
Scalable Gate Architecture for a One-Dimensional Array of Semiconductor Spin Qubits Zajac, D. M.; Hazard, T. M.; Mi, X. Physical Review Applied, Vol. 6, Issue 5 https://doi.org/10.1103/PhysRevApplied.6.054013	journal	November 2016
Electrostatically defined serial triple quantum dot charged with few electrons Schröer, D.; Greentree, A. D.; Gaudreau, L. Physical Review B, Vol. 76, Issue 7 https://doi.org/10.1103/PhysRevB.76.075306	journal	August 2007
Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6×106 cm2/Vs Lu, T. M.; Tsui, D. C.; Lee, C. -H. Applied Physics Letters, Vol. 94, Issue 18 https://doi.org/10.1063/1.3127516	journal	May 2009
Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot Kawakami, E.; Scarlino, P.; Ward, D. R. Nature Nanotechnology, Vol. 9, Issue 9 https://doi.org/10.1038/nnano.2014.153	journal	August 2014
Undoped accumulation-mode Si/SiGe quantum dots Borselli, M. G.; Eng, K.; Ross, R. S. Nanotechnology, Vol. 26, Issue 37 https://doi.org/10.1088/0957-4484/26/37/375202	journal	August 2015
The three dimensionality of triple quantum dot stability diagrams Rogge, M. C.; Haug, Rolf J. Bristol : IOP Publishing Ltd. https://doi.org/10.15488/1315	other	January 2009
Undoped accumulation-mode Si/SiGe quantum dots Borselli, Matthew G.; Eng, Kevin; Ross, Richard S. arXiv https://doi.org/10.48550/arxiv.1408.0600	preprint	January 2014
A Reconfigurable Gate Architecture for Si/SiGe Quantum Dots Zajac, D. M.; Hazard, T. M.; Mi, X. arXiv https://doi.org/10.48550/arxiv.1502.01624	text	January 2015
Second Harmonic Coherent Driving of a Spin Qubit in a Si/SiGe Quantum Dot Scarlino, P.; Kawakami, E.; Ward, D. R. arXiv https://doi.org/10.48550/arxiv.1504.06436	text	January 2015
Reduced sensitivity to charge noise in semiconductor spin qubits via symmetric operation Reed, M. D.; Maune, B. M.; Andrews, R. W. arXiv https://doi.org/10.48550/arxiv.1508.01223	text	January 2015
A fault-tolerant addressable spin qubit in a natural silicon quantum dot Takeda, K.; Kamioka, J.; Otsuka, T. arXiv https://doi.org/10.48550/arxiv.1602.07833	text	January 2016
Fabrication of quantum dots in undoped Si/Si$_{0.8}$Ge$_{0.2}$ heterostructures using a single metal-gate layer Lu, T. M.; Gamble, J. K.; Muller, R. P. arXiv https://doi.org/10.48550/arxiv.1608.08107	text	January 2016
Circuit Quantum Electrodynamics Architecture for Gate-Defined Quantum Dots in Silicon Mi, X.; Cady, J. V.; Zajac, D. M. arXiv https://doi.org/10.48550/arxiv.1610.05571	text	January 2016
Electron transport through double quantum dots van der Wiel, W. G.; De Franceschi, S.; Elzerman, J. M. arXiv https://doi.org/10.48550/arxiv.cond-mat/0205350	text	January 2002
Stability Diagram of a Few-Electron Triple Dot Gaudreau, Louis; Studenikin, Sergei; Sachrajda, Andy arXiv https://doi.org/10.48550/arxiv.cond-mat/0601597	text	January 2006
An electrostatically defined serial triple quantum dot charged with few electrons Schröer, D.; Greentree, A. D.; Gaudreau, L. arXiv https://doi.org/10.48550/arxiv.cond-mat/0703450	text	January 2007

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Title: Enhancement-mode two-channel triple quantum dot from an undoped Si/Si0.8Ge0.2 quantum well hetero-structure

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