Fabrication of quantum dots in undoped Si/Si0.8Ge0.2 heterostructures using a single metal-gate layer

Lu, T. M.; Gamble, J. K.; Muller, R. P.; Nielsen, E.; Bethke, D.; Ten Eyck, G. A.; Pluym, T.; Wendt, J. R.; Dominguez, J.; Lilly, M. P.; Carroll, M. S.; Wanke, M. C.

doi:10.1063/1.4961889

Title: Fabrication of quantum dots in undoped Si/Si_0.8Ge_0.2 heterostructures using a single metal-gate layer

Journal Article · Mon Aug 01 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4961889· OSTI ID:1320515

^[1]; Gamble, J. K. ^[1];

^[1]; Nielsen, E. ^[1]; Bethke, D. ^[1]; Ten Eyck, G. A. ^[1]; Pluym, T. ^[1]; Wendt, J. R. ^[1]; Dominguez, J. ^[1]; Lilly, M. P. ^[1]; Carroll, M. S. ^[1]; Wanke, M. C. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for their potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe heterostructures with Ge concentration close to 30%. Here, we report the fabrication and low-temperature characterization of quantum dots in the Si/Si_0.8Ge_0.2 heterostructures using only one metal-gate layer. We find that the threshold voltage of a channel narrower than 1 μm increases as the width decreases. The higher threshold can be attributed to the combination of quantum confinement and disorder. We also find that the lower Ge ratio used here leads to a narrower operational gate bias range. The higher threshold combined with the limited gate bias range constrains the device design of lithographic quantum dots. We incorporate such considerations in our device design and demonstrate a quantum dot that can be tuned from a single dot to a double dot. Furthermore, the device uses only a single metal-gate layer, greatly simplifying device design and fabrication.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: Work for Others (WFO); USDOE

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1320515

Report Number(s):: SAND2016-8268J; APPLAB; 646874

Journal Information:: Applied Physics Letters, Vol. 109, Issue 9; ISSN 0003-6951

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 7 works

Citation information provided by
Web of Science

References (13)

A silicon-based nuclear spin quantum computer Kane, B. E. Nature, Vol. 393, Issue 6681 https://doi.org/10.1038/30156	journal	May 1998
Capacitively induced high mobility two-dimensional electron gas in undoped Si∕Si1−xGex heterostructures with atomic-layer-deposited dielectric Lu, T. M.; Liu, J.; Kim, J. Applied Physics Letters, Vol. 90, Issue 18 https://doi.org/10.1063/1.2736273	journal	April 2007
Screening of remote charge scattering sites from the oxide/silicon interface of strained Si two-dimensional electron gases by an intermediate tunable shielding electron layer Huang, Chiao-Ti; Li, Jiun-Yun; Chou, Kevin S. Applied Physics Letters, Vol. 104, Issue 24 https://doi.org/10.1063/1.4884650	journal	June 2014
A reconfigurable gate architecture for Si/SiGe quantum dots Zajac, D. M.; Hazard, T. M.; Mi, X. Applied Physics Letters, Vol. 106, Issue 22 https://doi.org/10.1063/1.4922249	journal	June 2015
Quantum control and process tomography of a semiconductor quantum dot hybrid qubit Kim, Dohun; Shi, Zhan; Simmons, C. B. Nature, Vol. 511, Issue 7507 https://doi.org/10.1038/nature13407	journal	July 2014
Electron transport through double quantum dots van der Wiel, W. G.; De Franceschi, S.; Elzerman, J. M. Reviews of Modern Physics, Vol. 75, Issue 1 https://doi.org/10.1103/RevModPhys.75.1	journal	December 2002
Isotopically enhanced triple-quantum-dot qubit Eng, Kevin; Ladd, Thaddeus D.; Smith, Aaron Science Advances, Vol. 1, Issue 4 https://doi.org/10.1126/sciadv.1500214	journal	May 2015
Enhancement-mode buried strained silicon channel quantum dot with tunable lateral geometry Lu, T. M.; Bishop, N. C.; Pluym, T. Applied Physics Letters, Vol. 99, Issue 4 https://doi.org/10.1063/1.3615288	journal	July 2011
Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistors Lu, T. M.; Lee, C. -H.; Huang, S. -H. Applied Physics Letters, Vol. 99, Issue 15 https://doi.org/10.1063/1.3652909	journal	October 2011
High-mobility Si and Ge structures Schäffler, Friedrich Semiconductor Science and Technology, Vol. 12, Issue 12 https://doi.org/10.1088/0268-1242/12/12/001	journal	December 1997
Quantum computation with quantum dots Loss, Daniel; DiVincenzo, David P. Physical Review A, Vol. 57, Issue 1 https://doi.org/10.1103/PhysRevA.57.120	journal	January 1998
Silicon quantum electronics Zwanenburg, Floris A.; Dzurak, Andrew S.; Morello, Andrea Reviews of Modern Physics, Vol. 85, Issue 3 https://doi.org/10.1103/RevModPhys.85.961	journal	July 2013
Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6×106 cm2/Vs Lu, T. M.; Tsui, D. C.; Lee, C. -H. Applied Physics Letters, Vol. 94, Issue 18 https://doi.org/10.1063/1.3127516	journal	May 2009

Cited By (4)

Enhancement-mode two-channel triple quantum dot from an undoped Si/Si _0.8 Ge _0.2 quantum well hetero-structure Studenikin, S. A.; Gaudreau, L.; Kataoka, K. Applied Physics Letters, Vol. 112, Issue 23 https://doi.org/10.1063/1.5023596	journal	June 2018
Quantum dots with split enhancement gate tunnel barrier control Rochette, S.; Rudolph, M.; Roy, A. -M. Applied Physics Letters, Vol. 114, Issue 8 https://doi.org/10.1063/1.5091111	journal	February 2019
Single and double hole quantum dots in strained Ge/SiGe quantum wells Hardy, Will J.; Harris, C. Thomas; Su, Yi-Hsin Nanotechnology, Vol. 30, Issue 21 https://doi.org/10.1088/1361-6528/ab061e	journal	March 2019
Single and Double Hole Quantum Dots in Strained Ge/SiGe Quantum Wells Hardy, Will J.; Harris, C. Thomas; Su, Yi-Hsin arXiv https://doi.org/10.48550/arxiv.1808.07077	text	January 2018

Similar Records

Fabrication of quantum dots in undoped Si/Si{sub 0.8}Ge{sub 0.2} heterostructures using a single metal-gate layer

Journal Article · Mon Aug 29 00:00:00 EDT 2016 · Applied Physics Letters · OSTI ID:1320515

Gamble, J. K.; Muller, R. P.; Nielsen, E.; +8 more

Enhancement-mode two-channel triple quantum dot from an undoped Si/Si_0.8Ge_0.2 quantum well hetero-structure

Journal Article · Mon Jun 04 00:00:00 EDT 2018 · Applied Physics Letters · OSTI ID:1320515

Studenikin, S. A.; Gaudreau, L.; Kataoka, K.; +2 more

Si and SiGe based double top gated accumulation mode single electron transistors for quantum bits.

Conference · Wed Oct 01 00:00:00 EDT 2008 · OSTI ID:1320515

Wendt, Joel Robert; Ten Eyck, Gregory A; Childs, Kenton David; +10 more

Related Subjects

36 MATERIALS SCIENCE

Title: Fabrication of quantum dots in undoped Si/Si0.8Ge0.2 heterostructures using a single metal-gate layer

Citation Formats

References (13)

Cited By (4)

Similar Records

Related Subjects

Title: Fabrication of quantum dots in undoped Si/Si_0.8Ge_0.2 heterostructures using a single metal-gate layer