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Title: Analysis of TID Process Geometry and Bias Condition Dependence of 14-nm FinFETs and Implications for RF and SRAM Performance.

Conference ·

Abstract not provided.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1420372
Report Number(s):
SAND2016-4618C; 640237
Resource Relation:
Journal Volume: 64; Journal Issue: 1; Conference: Proposed for presentation at the NSREC.
Country of Publication:
United States
Language:
English

Cited By (7)

A novel body-on-insulator (BOI) FinFET with excellent TID tolerance and scaling capability journal September 2019
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FCC-hh: The Hadron Collider: Future Circular Collider Conceptual Design Report Volume 3 journal July 2019
FCC-hh: The Hadron Collider text January 2019
FCC-ee: The Lepton Collider text January 2019
FCC-hh: The Hadron Collider text January 2019
FCC-ee: The Lepton Collider text January 2019