ICFA Beam Dynamics Newsletter

Technical Report · Tue Nov 21 00:00:00 EST 2017

DOI:https://doi.org/10.2172/1412764· OSTI ID:1412764

Pikin, A. ^[1]

---

1. Brookhaven National Lab. (BNL), Upton, NY (United States)

Electron beam ion sources technology made significant progress since 1968 when this method of producing highly charged ions in a potential trap within electron beam was proposed by E. Donets. Better understanding of physical processes in EBIS, technological advances and better simulation tools determined significant progress in key EBIS parameters: electron beam current and current density, ion trap capacity, attainable charge states. Greatly increased the scope of EBIS and EBIT applications. An attempt is made to compile some of EBIS engineering problems and solutions and to demonstrate a present stage of understanding the processes and approaches to build a better EBIS.

• Research Organization: Brookhaven National Laboratory (BNL), Upton, NY (United States). Electron Beam Ion Source
• Sponsoring Organization: USDOE Office of Science (SC), Nuclear Physics (NP)
• DOE Contract Number: SC0012704
• OSTI ID: 1412764
• Report Number(s): BNL-114739-2017-NE; TRN: US1900004
• Country of Publication: United States
• Language: English

Related Subjects

43 PARTICLE ACCELERATORS
ELECTRON BEAMS
ELECTRON BEAM ION SOURCES
BEAM CURRENTS
ELECTRONS
BEAM DYNAMICS
IONS
Electron Beam Ion Source