Electron beam ion source and electron beam ion trap (invited)

Journal Article · Mon Feb 15 00:00:00 EST 2010 · Review of Scientific Instruments

DOI:https://doi.org/10.1063/1.3303820· OSTI ID:22053816

Becker, Reinard ^[1]; Kester, Oliver ^[2]

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1. Scientific Software Service, Kapellenweg 2a, D-63571 Gelnhausen (Germany)
2. National Superconducting Cyclotron Laboratory, Michigan State University, East Lansing, Michigan 48824 (United States)

The electron beam ion source (EBIS) and its trap variant [electron beam ion trap (EBIT)] celebrated their 40th and 20th anniversary, respectively, at the EBIS/T Symposium 2007 in Heidelberg. These technologically challenging sources of highly charged ions have seen a broad development in many countries over the last decades. In contrast to most other ion sources the recipe of improvement was not ''sorcery'' but a clear understanding of the physical laws and obeying the technological constraints. This review will report important achievements of the past as well as promising developments in the future.

• OSTI ID: 22053816
• Journal Information: Review of Scientific Instruments, Vol. 81, Issue 2; Conference: ICIS 2009: 13. international conference on ion sources, Gatlinburg, TN (United States), 20-25 Sep 2009; Other Information: (c) 2010 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0034-6748
• Country of Publication: United States
• Language: English

Related Subjects

43 PARTICLE ACCELERATORS
ELECTRON BEAM ION SOURCES
ELECTRON BEAMS
IONS
REVIEWS
TRAPS