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Electron beam ion source and electron beam ion trap (invited)

Journal Article · · Review of Scientific Instruments
DOI:https://doi.org/10.1063/1.3303820· OSTI ID:22053816
 [1];  [2]
  1. Scientific Software Service, Kapellenweg 2a, D-63571 Gelnhausen (Germany)
  2. National Superconducting Cyclotron Laboratory, Michigan State University, East Lansing, Michigan 48824 (United States)
The electron beam ion source (EBIS) and its trap variant [electron beam ion trap (EBIT)] celebrated their 40th and 20th anniversary, respectively, at the EBIS/T Symposium 2007 in Heidelberg. These technologically challenging sources of highly charged ions have seen a broad development in many countries over the last decades. In contrast to most other ion sources the recipe of improvement was not ''sorcery'' but a clear understanding of the physical laws and obeying the technological constraints. This review will report important achievements of the past as well as promising developments in the future.
OSTI ID:
22053816
Journal Information:
Review of Scientific Instruments, Journal Name: Review of Scientific Instruments Journal Issue: 2 Vol. 81; ISSN 0034-6748; ISSN RSINAK
Country of Publication:
United States
Language:
English

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