Effect of chemical pressure on the electronic phase transition in Ca 1-x Sr x Mn 7 O 12 films
- Drexel Univ., Philadelphia, PA (United States). Dept. of Materials Science and Engineering
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Quantum Condensed Matter Division; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Physics and Astronomy
Here, we demonstrate how chemical pressure affects the structural and electronic phase transitions of the quadruple perovskite CaMn7O12 by Sr doping, a compound that exhibits a charge-ordering transition above room temperature making it a candidate for oxide electronics. We also have synthesized Ca1-xSrxMn7O12 (0 ≤ x ≤ 0.6) thin films by oxide molecular beam epitaxy on (LaAlO3)0.3(SrAl0.5Ta0.5O3)0.7 (LSAT) substrates. The substitution of Sr for Ca results in a linear expansion of the lattice, as revealed by X-ray diffraction. Temperature-dependent resistivity and X-ray diffraction measurements are used to demonstrate that the coupled charge-ordering and structural phase transitions can be tuned with Sr doping. An increase in Sr concentration acts to decrease the phase transition temperature (T*) from 426 K at x = 0 to 385 K at x = 0.6. Furthemore, the presence of a tunable electronic phase transition, above room temperature, points to the potential applicability of Ca1-xSrxMn7O12 in sensors or oxide electronics, for example, via charge doping.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- AC05-00OR22725; SC0014664
- OSTI ID:
- 1407986
- Alternate ID(s):
- OSTI ID: 1392139
- Journal Information:
- APL Materials, Vol. 5, Issue 9; ISSN 2166-532X
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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