Electronic transition above room temperature in CaMn7O12 films

Huon, A.; Lang, A. C.; Saldana-Greco, D.; Lim, J. S.; Moon, E. J.; Rappe, A. M.; Taheri, M. L.; May, S. J.

doi:10.1063/1.4932132

Title: Electronic transition above room temperature in CaMn₇O₁₂ films

Journal Article · Mon Oct 05 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4932132· OSTI ID:1469380

Huon, A. ^[1]; Lang, A. C. ^[1]; Saldana-Greco, D. ^[2]; Lim, J. S. ^[2]; Moon, E. J. ^[1]; Rappe, A. M. ^[2]; Taheri, M. L. ^[1]; May, S. J. ^[1]

Drexel Univ., Philadelphia, PA (United States)
Univ. of Pennsylvania, Philadelphia, PA (United States)

Here, we report on the electronic phase transition in CaMn₇O₁₂ quadruple perovskite films synthesized by oxide molecular beam epitaxy on SrLaAlO₄ and La_0.3Sr_0.7Al_0.65Ta_0.35O₃ substrates. We use x-ray diffraction and transmission electron microscopy to confirm that the CaMn₇O₁₂ phase has been realized. Temperature dependent resistivity measurements reveal a signature of a charge ordering phase transition at ≈425 K, consistent with bulk CaMn₇O₁₂. The transition temperature is found to be relatively invariant to changes in the cation stoichiometry. Density functional theory calculations reveal the changes in atomic and electronic structure induced by the charge ordering transition.

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Research Organization:: Univ. of Pennsylvania, Philadelphia, PA (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: FG02-07ER46431

OSTI ID:: 1469380

Alternate ID(s):: OSTI ID: 1222850

Journal Information:: Applied Physics Letters, Vol. 107, Issue 14; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 8 works

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