Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide

Sampson, Matthew D.; Emery, Jonathan D.; Pellin, Michael J.; Martinson, Alex B. F.

doi:10.1021/acsami.7b01410

Title: Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide

Journal Article · Wed Apr 05 00:00:00 EDT 2017 · ACS Applied Materials and Interfaces

DOI:https://doi.org/10.1021/acsami.7b01410· OSTI ID:1402052

Sampson, Matthew D. ^[1]; Emery, Jonathan D. ^[2]; Pellin, Michael J. ^[1];

^[1]

Argonne National Lab. (ANL), Lemont, IL (United States)
Argonne National Lab. (ANL), Lemont, IL (United States); Northwestern Univ., Evanston, IL (United States)

The atomic layer deposition (ALD) of several metal oxides is selectivity inhibited on alkanethiol self-assembled monolayers (SAMs) on Au and the eventual nucleation mechanism is investigated. The inhibition ability of the SAM is significantly improved by the in situ H₂-plasma pretreatment of the Au substrate prior to gas-phase deposition of a long-chain alkanethiol, 1-dodecanethiol (DDT). This more rigorous surface preparation inhibits even aggressive oxide ALD precursors, including trimethylaluminum and water, for at least 20 cycles. We study the effect that ALD precursor purge times, growth temperature, alkanethiol chain length, alkanethiol deposition time, and plasma treatment time have on Al₂O₃ ALD inhibition. This is the first example of Al₂O₃ ALD inhibition from a vapor-deposited SAM. Inhibition of Al₂O₃, ZnO, and MnO ALD processes are compared, revealing the versatility of this selective surface treatment. As a result, atomic force microscopy (AFM) and grazing incidence x-ray fluorescence (GIXRF) further reveals insight into the mechanism by which the well-defined surface chemistry of ALD may eventually be circumvented to allow metal oxide nucleation and growth on SAM-modified surfaces.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States); Energy Frontier Research Centers (EFRC) (United States). Argonne-Northwestern Solar Energy Research Center (ANSER)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-06CH11357; SC0001059

OSTI ID:: 1402052

Journal Information:: ACS Applied Materials and Interfaces, Vol. 9, Issue 39; ISSN 1944-8244

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 22 works

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From the Bottom-Up: Toward Area-Selective Atomic Layer Deposition with High Selectivity Mackus, Adriaan J. M.; Merkx, Marc J. M.; Kessels, Wilhelmus M. M. Chemistry of Materials, Vol. 31, Issue 1 https://doi.org/10.1021/acs.chemmater.8b03454	journal	November 2018
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36 MATERIALS SCIENCE
38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEAR CHEMISTRY
Self-Assembled Monolayers
Alkanethiols
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Title: Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide

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