Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au

Carey, IV, Patrick H.; Yang, Jiancheng; Ren, F.; Hays, David C.; Pearton, S. J.; Jang, Soohwan; Kuramata, Akito; Kravchenko, Ivan I.

doi:10.1063/1.4996172

Title: Ohmic contacts on n-type β-Ga₂O₃ using AZO/Ti/Au

Journal Article · Thu Sep 14 00:00:00 EDT 2017 · AIP Advances

DOI:https://doi.org/10.1063/1.4996172· OSTI ID:1394628

^[1]; Yang, Jiancheng ^[1]; Ren, F. ^[1]; Hays, David C. ^[1];

^[1]; Jang, Soohwan ^[2]; Kuramata, Akito ^[3];

^[4]

Univ. of Florida, Gainesville, FL (United States)
Dankook Univ., Yongin (Korea)
Japan and Novel Crystal Technology, Inc., Saitama (Japan)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

AZO interlayers between n-Ga₂O₃ and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 300°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga₂O₃ stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10^-5 Ω-cm² were achieved after a relatively low temperature 400°C annealing. In conclusion, the conduction band offset between AZO and Ga₂O₃ is 0.79 eV and provides a favorable pathway for improved electron transport across this interface.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1394628

Alternate ID(s):: OSTI ID: 1390352

Journal Information:: AIP Advances, Vol. 7, Issue 9; ISSN 2158-3226

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 36 works

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A review of Ga ₂ O ₃ materials, processing, and devices Pearton, S. J.; Yang, Jiancheng; Cary, Patrick H. Applied Physics Reviews, Vol. 5, Issue 1 https://doi.org/10.1063/1.5006941	journal	March 2018
Band alignment of In ₂ O ₃ /β-Ga ₂ O ₃ interface determined by X-ray photoelectron spectroscopy Sun, Shun-Ming; Liu, Wen-Jun; Wang, Yong-Ping Applied Physics Letters, Vol. 113, Issue 3 https://doi.org/10.1063/1.5038615	journal	July 2018
Valence and conduction band offsets for sputtered AZO and ITO on (010) (Al _0.14 Ga _0.86 ) ₂ O ₃ Fares, Chaker; Ren, F.; Lambers, Eric Semiconductor Science and Technology, Vol. 34, Issue 2 https://doi.org/10.1088/1361-6641/aaf8d7	journal	January 2019
Current transport mechanism of Mg/Au ohmic contacts to lightly doped n-type β -Ga ₂ O ₃ Shi, Jianjun; Xia, Xiaochuan; Abbas, Qasim Journal of Semiconductors, Vol. 40, Issue 1 https://doi.org/10.1088/1674-4926/40/1/012805	journal	January 2019
Recent Advances in β-Ga2O3–Metal Contacts Huan, Ya-Wei; Sun, Shun-Ming; Gu, Chen-Jie Nanoscale Research Letters, Vol. 13, Issue 1 https://doi.org/10.1186/s11671-018-2667-2	journal	August 2018
Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga2O3 ( 2 ¯ 01 $$ \overline{2}01 $$ ) Heterojunctions Sun, Shun-Ming; Liu, Wen-Jun; Xiao, Yi-Fan Nanoscale Research Letters, Vol. 13, Issue 1 https://doi.org/10.1186/s11671-018-2832-7	journal	December 2018
Investigation of energy band at atomic layer deposited AZO/β-Ga2O3 ($$ \overline{2}01 $$) heterojunctions Sun, Shun-Ming; Liu, Wen-Jun; Golosov, Dmitriy Anatolyevich Nanoscale Research Letters, Vol. 14, Issue 1 https://doi.org/10.1186/s11671-019-3092-x	journal	August 2019
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