Planar Ohmic Contacts to Al 0.45 Ga 0.55 N/Al 0.3 Ga 0.7 N High Electron Mobility Transistors

Klein, Brianna A.; Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.; Sanchez, Carlos A.; Douglas, Erica A.; Crawford, Mary H.; Miller, Mary A.; Kotula, Paul G.; Fortune, Torben R.; Abate, Vincent M.

doi:10.1149/2.0181711jss

Planar Ohmic Contacts to Al _0.45 Ga _0.55 N/Al _0.3 Ga _0.7 N High Electron Mobility Transistors

Journal Article · Sat Sep 23 00:00:00 EDT 2017 · ECS Journal of Solid State Science and Technology

DOI:https://doi.org/10.1149/2.0181711jss· OSTI ID:1429630

Klein, Brianna A. ^[1]; Baca, Albert G. ^[1]; Armstrong, Andrew M. ^[1]; Allerman, Andrew A. ^[1]; Sanchez, Carlos A. ^[1]; Douglas, Erica A. ^[1]; Crawford, Mary H. ^[1]; Miller, Mary A. ^[1]; Kotula, Paul G. ^[1]; Fortune, Torben R. ^[1]; Abate, Vincent M. ^[1]

Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Here, we present a low resistance, straightforward planar ohmic contact for Al_0.45Ga_0.55N/Al_0.3Ga_0.7N high electron mobility transistors. Five metal stacks (a/Al/b/Au; a = Ti, Zr, V, Nb/Ti; b = Ni, Mo, V) were evaluated at three individual annealing temperatures (850, 900, and 950°C). The Ti/Al/Ni/Au achieved the lowest specific contact resistance at a 900°C anneal temperature. Transmission electron microscopy analysis revealed a metal-semiconductor interface of Ti-Al-Au for an ohmic (900°C anneal) and a Schottky (850°C anneal) Ti/Al/Ni/Au stack. HEMTs were fabricated using the optimized recipe with resulting contacts that had room-temperature specific contact resistances of ρ_c = 2.5 × 10^-5 Ω cm², sheet resistances of R_SH = 3.9 kΩ/$$\blacksquare$$, and maximum current densities of 75 mA/mm (at VGATE of 2 V). Electrical measurements from -50 to 200°C had decreasing specific contact resistance and increasing sheet resistance, with increasing temperature. These contacts enabled state-of-the-art performance of Al_0.45Ga_0.55N/Al_0.3Ga_0.7N HEMTs.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000; NA0003525

OSTI ID:: 1429630

Report Number(s):: SAND2017--10223J; 657184

Journal Information:: ECS Journal of Solid State Science and Technology, Journal Name: ECS Journal of Solid State Science and Technology Journal Issue: 11 Vol. 6; ISSN 2162-8769

Publisher:: Electrochemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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AlGaN polarization-doped field effect transistor with compositionally graded channel from Al _0.6 Ga _0.4 N to AlN Armstrong, Andrew M.; Klein, Brianna A.; Baca, Albert G. Applied Physics Letters, Vol. 114, Issue 5 https://doi.org/10.1063/1.5058263	journal	February 2019
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