Thermally-isolated silicon-based integrated circuits and related methods
Patent
·
OSTI ID:1356199
Thermally isolated devices may be formed by performing a series of etches on a silicon-based substrate. As a result of the series of etches, silicon material may be removed from underneath a region of an integrated circuit (IC). The removal of the silicon material from underneath the IC forms a gap between remaining substrate and the integrated circuit, though the integrated circuit remains connected to the substrate via a support bar arrangement that suspends the integrated circuit over the substrate. The creation of this gap functions to release the device from the substrate and create a thermally-isolated integrated circuit.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- Assignee:
- Sandia Corporation
- Patent Number(s):
- 9,646,874
- Application Number:
- 13/959,136
- OSTI ID:
- 1356199
- Resource Relation:
- Patent File Date: 2013 Aug 05
- Country of Publication:
- United States
- Language:
- English
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