Hybridization gap in the semiconducting compound SrIr4In2Ge4
Journal Article
·
· Inorganic Chemistry
- Northwestern Univ., Evanston, IL (United States); Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Korea Research Institute of Chemical Technology, Ulsan (South Korea)
- Northwestern Univ., Evanston, IL (United States); Argonne National Lab. (ANL), Lemont, IL (United States)
- Northwestern Univ., Evanston, IL (United States)
- Argonne National Lab. (ANL), Lemont, IL (United States)
Large single crystals of SrIr4In2Ge4 were synthesized using the In flux method. This compound is a hybridization gap semiconductor with an experimental optical band gap of E-g = 0.25(3) eV. It crystallizes in the tetragonal EuIr4In2Ge4 structure type with space group I (4) over bar 2m and unit cell parameters a = 6.9004(5) angstrom and c = 8.7120(9) angstrom. The electronic structure is very similar to both EuIr4In2Ge4 and the parent structure Ca3Ir4Ge4, suggesting that these compounds comprise a new family of hybridization gap materials that exhibit indirect gap, semi-conducting behavior at a valence electron count of 60 per formula unit, similar to the Heusler alloys.
- Research Organization:
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
- Grant/Contract Number:
- AC52-07NA27344; DMR-1121262; AC02-06CH11357
- OSTI ID:
- 1342031
- Alternate ID(s):
- OSTI ID: 1352571
- Report Number(s):
- LLNL-JRNL-700098
- Journal Information:
- Inorganic Chemistry, Vol. 55, Issue 23; ISSN 0020-1669
- Publisher:
- American Chemical Society (ACS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 1 work
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