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Electronic correlations in the semiconducting half-Heusler compound FeVSb

Journal Article · · Physical Review. B
Electronic correlations are crucial to the low-energy physics of metallic systems with localized d and f states; however, their effect on band insulators and semiconductors is typically negligible. Here, we measure the electronic structure of the half-Heusler compound FeVSb, a band insulator with a filled shell configuration of 18 valence electrons per formula unit ( s2p6d10 ). Additionally, angle-resolved photoemission spectroscopy reveals a mass renormalization of m*/mbare=1.4 , where m* is the measured effective mass and mbare is the mass from density functional theory calculations with no added on-site Coulomb repulsion. Our measurements are in quantitative agreement with dynamical mean-field theory calculations, highlighting the many-body origin of the mass renormalization. This mass renormalization lies in dramatic contrast to other filled shell intermetallics, including the thermoelectric materials CoTiSb and NiTiSn, and has a similar origin to that in FeSi, where Hund's coupling induced fluctuations across the gap can explain a dynamical self-energy and correlations. Our work calls for a rethinking of the role of correlations and Hund's coupling in intermetallic band insulators.
Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Organization:
National Science Foundation (NSF); USDOE Office of Science (SC); University of Wisconsin - Madison - Materials Research Science and Engineering Center (MRSEC)
Grant/Contract Number:
AC02-06CH11357; SC0016371
OSTI ID:
1765372
Journal Information:
Physical Review. B, Journal Name: Physical Review. B Journal Issue: 4 Vol. 103; ISSN 2469-9950
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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