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Title: Single atom visibility in STEM optical depth sectioning

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4965709· OSTI ID:1338557
ORCiD logo [1];  [2];  [3]; ORCiD logo [4];  [1];  [5]
  1. Univ. of Tokyo (Japan). Inst. of Engineering Innovation
  2. National Univ. of Singapore (Singapore). Dept. of Materials Science and Engineering
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
  4. Monash Univ., Melbourne, VIC (Australia). School of Physics and Astronomy
  5. Univ. of Tokyo (Japan). Inst. of Engineering Innovation; Japan Fine Ceramics Center, Nagoya (Japan). Nanostructures Research Lab.

The continuing development of aberration correctors for the scanning transmission electron microscope (STEM) offers the possibility of locating single atoms in crystals in 3D via optical depth sectioning. The main factors that determine the feasibility of such an approach are visibility and dose requirements. In this paper, we show how Poisson's statistics can be quantitatively incorporated into STEM image simulations and demonstrate that the 3D location of single cerium atoms in wurtzite-type aluminum nitride is indeed feasible under large-angle illumination conditions with a relatively low dose. We also show that chromatic aberration does not presently represent a limitation provided a cold field emission source is used. Finally, these results suggest efforts into improved aberration corrector designs for larger illumination angles that offer significant potential for 3D structure determination of materials.

Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); New Energy and Industrial Technology Development Organization (NEDO) (Japan); Australian Research Council (Australia)
Grant/Contract Number:
AC05-00OR22725; AC02-05CH11231; DP110102228
OSTI ID:
1338557
Alternate ID(s):
OSTI ID: 1329329
Journal Information:
Applied Physics Letters, Vol. 109, Issue 16; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 33 works
Citation information provided by
Web of Science

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Cited By (6)

Microstructural Origins of High Piezoelectric Performance: A Pathway to Practical Lead‐Free Materials journal June 2019
Depth sensitive imaging of graphene with an atomic resolution microscope journal December 2018
Prospect for detecting magnetism of a single impurity atom using electron magnetic chiral dichroism journal September 2019
Material structure, properties, and dynamics through scanning transmission electron microscopy journal April 2018
Single-atom dynamics in scanning transmission electron microscopy journal September 2017
Materials Structure, Properties and Dynamics through Scanning Transmission Electron Microscopy text January 2019