Domain imaging in ferroelectric thin films via channeling-contrast backscattered electron microscopy
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Electronic, Optical and Nano Materials Dept.
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Materials Performance and Characterization Dept.
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Microsystems Science and Technology Center
- North Carolina State Univ., Raleigh, NC (United States). Dept. of Materials Science and Engineering
We report that ferroelastic domain walls provide opportunities for deterministically controlling mechanical, optical, electrical, and thermal energy. Domain wall characterization in micro- and nanoscale systems, where their spacing may be of the order of 100 nm or less is presently limited to only a few techniques, such as piezoresponse force microscopy and transmission electron microscopy. These respective techniques cannot, however, independently characterize domain polarization orientation and domain wall motion in technologically relevant capacitor structures or in a non-destructive manner, thus presenting a limitation of their utility. In this work, we show how backscatter scanning electron microscopy utilizing channeling contrast yield can image the ferroelastic domain structure of ferroelectric films with domain wall spacing as narrow as 10 nm.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC04-94AL85000; DMR-1508191
- OSTI ID:
- 1338400
- Report Number(s):
- SAND-2016-12845J; 650062
- Journal Information:
- Journal of Materials Science, Vol. 52, Issue 2; ISSN 0022-2461
- Publisher:
- SpringerCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Domain structure evolution in relaxor PLZT 8/65/35 ceramics after chemical etching and electron beam irradiation
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journal | March 2018 |
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