The development of a high sensitivity neutron displacement damage sensor
Here, the capability to characterize the neutron energy spectrum and fluence received by a test object is crucial to under-standing the damage effects observed in electronic components. For nuclear research reactors and high energy density physics fa-cilities this can pose exceptional challenges, especially with low level neutron fluences. An ASTM test method for characterizing neutron environments utilizes the 2N2222A transistor as a 1-MeV equivalent neutron fluence sensor and is applicable for environ-ments with 1 x 1012 - 1 x 1014 1-MeV(Si)-Eqv.-n/cm2. In this work we seek to extend the range of this test method to lower fluence environments utilizing the 2N1486 transistor. Here, the 2N1486 is shown to be an effective neutron displacement damage sensor as low as 1 x 1010 1-MeV(Si)-Eqv.-n/cm2.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1338309
- Report Number(s):
- SAND-2016-6510J; 644829; TRN: US1701217
- Journal Information:
- IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science; ISSN 0018-9499
- Publisher:
- Institute of Electrical and Electronics Engineers (IEEE)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Experimental study of pulse neutron irradiation damage in SiGe HBT
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journal | September 2018 |
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