Measured silicon displacement damage ratios support the need to replace the ASTM E-722 damage function with the NJOY calculated function

Conference · Mon Jan 01 04:00:00 EST 1990

OSTI ID:6943969

Kelly, J G; Griffin, P J

Experiments with discrete silicon bipolar transistors exposed to 14 MeV neutrons and Sandia Pulsed Reactor (SPR III) fission type neutrons demonstrate that the silicon damage function listed in ASTM standard E-722 needs to be replaced by the NJOY calculated function to ensure simulation fidelity in testing for transient radiation effects in electronic devices. An annealing procedure applied between exposures ensured accurate damage comparisons between the two environments. Re-evaluation of the dosimetry foil cross sections and fluence determination methodology was also necessary to ensure that damage per neutron/cm{sup 2} could be evaluated properly. The results provide a clear distinction between the two damage predictions and show that the NJOY function is the one of choice. 15 refs., 2 figs., 1 tab.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• Sponsoring Organization: DOE/DP
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6943969
• Report Number(s): SAND-89-2284C; CONF-900814--8; ON: DE90016225
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CALCULATION METHODS
CROSS SECTIONS
DAMAGING NEUTRON FLUENCE
DISPLACEMENT RATES
DOSIMETRY
ELECTRONIC CIRCUITS
ELEMENTS
KERMA
NEUTRON DOSIMETRY
NEUTRON FLUENCE
NEUTRON SPECTRA
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
SPECTRA
TRANSISTORS