Neutron damage equivalence for silicon, silicon dioxide, and gallium arsenide

Conference · Tue Dec 01 04:00:00 EST 1987 · IEEE Trans. Nucl. Sci.; (United States)

OSTI ID:7160643

Luera, T F; Kelly, J G; Stein, H J; Lazo, M S; Lee, C E; Dawson, L R

Displacement- and ionization-energy transfers to Si, SiO/sub 2/, and GaAs as functions of incident neutron energy were calculated using new cross section data and fine group structure in the NJOY code system. Neutron spectra determinations for several reactor neutron environments were made using new activation cross sections and a new technique with the SAND II code. Measurements of carrier removal rates in GaAs and of Si transistor gain degradation were made in representative neutron environments. Experimental results are compared to damage ratios predicted with the new spectra and NJOY displacement functions. For fission-like spectra, calculated Si damage ratios are in good agreement with those determined with ASTM E722-85 and with measured transistor damage ratios. Significant differences are found between Si NJOY and ASTM E722-85 for 14-MeV-to-reactor neutron damage ratios where NJOY gives better agreement with experimental data reported in the literature. In GaAs 14-MeV-to-reactor experimental damage ratios are smaller than predicted by calculated displacement ratios. This suggests that a more complex model of damage for majority carrier removal in GaAs is required. The use of incorrect damage functions is shown to adversely affect simulation fidelity in some representative neutron environments.

• Research Organization: Sandia National Labs., P.O. Box 5800, Alb., NM (US)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 7160643
• Report Number(s): CONF-8707112-
• Conference Information: Journal Name: IEEE Trans. Nucl. Sci.; (United States) Journal Volume: NS-34:6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
656002 -- Condensed Matter Physics-- General Techniques in Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CALCULATION METHODS
CHALCOGENIDES
COMPUTER CODES
COMPUTERIZED SIMULATION
CROSS SECTIONS
DATA
ELECTRONIC CIRCUITS
ELEMENTS
ENERGY LOSSES
ENVIRONMENTAL EFFECTS
EXPERIMENTAL DATA
FUNCTIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
INTERACTIONS
LOSSES
N CODES
NEUTRON BEAMS
NEUTRONIC DAMAGE FUNCTIONS
NUCLEON BEAMS
NUMERICAL DATA
OXIDES
OXYGEN COMPOUNDS
PARTICLE BEAMS
PHYSICAL RADIATION EFFECTS
PNICTIDES
PROTON BEAMS
RADIATION EFFECTS
S CODES
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SIMULATION
TRANSISTORS