Sensitivity of silicon 1-MeV damage function to cross-section evaluation
- Sandia National Lab., Albuquerque, NM (United States)
- Clark Atlanta Univ., GA (United States)
The electronics radiation hardness-testing community uses the American Society for Testing and Materials (ASTM) E722-93 Standard Practice to define the energy dependence of the nonionizing neutron damage to silicon semiconductors. This neutron displacement damage response function is defined to be equal to the silicon displacement kerma. An Oak Ridge National Laboratory (ORNL) {sup 28}Si cross-section evaluation and the NJOY code are used to define the standard response function to be used in reporting 1-MeV (silicon) neutron damage and in determining neutron damage equivalence between test facilities. This paper provides information for the precision and bias section of the E722 standard.
- OSTI ID:
- 411807
- Report Number(s):
- CONF-951006--
- Journal Information:
- Transactions of the American Nuclear Society, Journal Name: Transactions of the American Nuclear Society Vol. 73; ISSN 0003-018X; ISSN TANSAO
- Country of Publication:
- United States
- Language:
- English
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