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Neutron damage equivalence in silicon, silicon dioxide, and gallium arsenide

Conference ·
OSTI ID:6489725
; ; ;

Displacement damage and ionization in Si, SiO/sub 2/, and GaAs are evaluated with representative neutron spectra using kerma factors generated with the NJOY code. Calculated damage ratios are compared with experiment. Impact on simulation fidelity is addressed.

Research Organization:
Sandia National Labs., Albuquerque, NM (USA); New Mexico Univ., Albuquerque (USA); Tills (Jack) and Associates, Inc., Albuquerque, NM (USA)
DOE Contract Number:
AC04-76DP00789
OSTI ID:
6489725
Report Number(s):
SAND-87-0361C; CONF-870724-5; ON: DE87005856
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
DAMAGE
DAMAGING NEUTRON FLUENCE
ELEMENTS
FUNCTIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
IONIZATION
NEUTRON FLUENCE
NEUTRONIC DAMAGE FUNCTIONS
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES