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Title: Experimental evidence of the generation of gaseous SiO as precursor for the growth of SiOx nanowires

Journal Article · · Applied Surface Science
 [1];  [2];  [1]
  1. Universidad Autonoma de Madrid (Spain). Departamento de Fisica Aplicada and Instituto Nicolas Cabrera
  2. University of Turabo, Gurabo, PR (United States). Nanomaterials Research Group, School of Natural Sciences and Technology
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The vapor–liquid–solid process is a fundamental and widely used mechanism for the growth of nanowires. In this article, experimental observations have been carried out to explain the growth mechanism of silicon-based nanowires using a solid-bulk silicon source as unique precursor. In addition, the synthesis consisted of a thermal treatment at 900°C under an Ar-H2 atmosphere with a low residual O2 concentration. Lastly, the presence of SiO in gaseous phase, originated via the active oxidation of the Si substrate, is shown as the principal factor responsible for the nanowires growth, via a process commonly termed as solid–vapor–liquid–solid.

Research Organization:
University of Rochester, NY (United States). Lab. for Laser Energetics
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
NA0000672
OSTI ID:
1335947
Alternate ID(s):
OSTI ID: 1247554
Journal Information:
Applied Surface Science, Vol. 345; ISSN 0169-4332
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 4 works
Citation information provided by
Web of Science

References (22)

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Related Subjects

36 MATERIALS SCIENCE
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
SiOx nanowires
Active oxidation
VLS process
CVD
SiO gas