Synthesis and characterization of amorphous SiO2 nanowires directly grown on Cu substrates
- Universidad Autonoma de Madrid (Spain). Departamento de Fisica Aplicada and Instituto Nicolas Cabrera
- University of Turabo, Gurabo (United States). Nanomaterials Research Group, School of Natural Sciences and Technology
In this work, a novel procedure for the growth of Silica nanowires directly from Cu substrates is reported. The singlestep synthesis procedure consists of a thermal treatment at 900 °C in Ar-H2 atmosphere, without the need for additional catalysts. Nanowires grow from Cu protrusions generated on the surface during annealing via Vapor–Liquid–Solid method, giving rise to a branched structure. These SiO2 nanostructures present an amorphous structure as evidenced by transmission electron microscopy. Silica nanowires grown on Cu and Si substrates have been characterized by XPS. Additionally, room-temperature photoluminescence measurements show a blue-green emission peak at ca. 509 nm (2.44 eV) attributed to oxygen deficiencies in the structure. The success of this procedure allows for future possible incorporation of these nanowires in optoelectronic devices.
- Research Organization:
- University of Rochester, NY (United States). Lab. for Laser Energetics
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- NA0000672
- OSTI ID:
- 1335964
- Journal Information:
- Journal of Sol-Gel Science and Technology, Vol. 81, Issue 2; ISSN 0928-0707
- Publisher:
- Springer
- Country of Publication:
- United States
- Language:
- English
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