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Title: High voltage photoconductive switch package

Patent ·
OSTI ID:1333220

A photoconductive switch having a wide bandgap material substrate between opposing electrodes, and a doped dielectric filler that is in contact with both the electrodes and the substrate at the triple point. The dielectric filler material is doped with a conductive material to make it partially or completely conducting, to minimize the field enhancement near the triple point both when the substrate is not conducting in the "off" state and when the substrate is rendered conducting by radiation in the "on" state.

Research Organization:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC52-07NA27344
Assignee:
Lawrence Livermore National Security, LLC (Livermore, CA
Patent Number(s):
9,500,773
Application Number:
13/913,319
OSTI ID:
1333220
Resource Relation:
Patent File Date: 2013 Jun 07
Country of Publication:
United States
Language:
English

References (5)

Optically Initiated Silicon Carbide High Voltage Switch patent-application April 2007
Methods and configurations for improving photo-conductive switch performance
  • Nunnally, W. C.; Cooperstock, D.
  • Conference Record of the Twenty-Fifth International Power Modulator Symposium and 2002 High-Voltage Workshop. International Power Modulator Conference, Conference Record of the Twenty-Fifth International Power Modulator Symposium, 2002 and 2002 High-Voltage Workshop. https://doi.org/10.1109/MODSYM.2002.1189446
conference January 2002
On some dual Integral Equations journal January 1951
Analysis and Control of the Current Distribution under Circular Dispersive Electrodes journal May 1982
Fundamentals, processes and applications of high-permittivity polymer–matrix composites journal May 2012

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