skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Photoconductive switch package

Patent ·
OSTI ID:1224426

A photoconductive switch is formed of a substrate that has a central portion of SiC or other photoconductive material and an outer portion of cvd-diamond or other suitable material surrounding the central portion. Conducting electrodes are formed on opposed sides of the substrate, with the electrodes extending beyond the central portion and the edges of the electrodes lying over the outer portion. Thus any high electric fields produced at the edges of the electrodes lie outside of and do not affect the central portion, which is the active switching element. Light is transmitted through the outer portion to the central portion to actuate the switch.

Research Organization:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC52-07NA27344
Assignee:
Lawrence Livermore National Security, LLC (Livermore, CA)
Patent Number(s):
9,171,988
Application Number:
14/047,643
OSTI ID:
1224426
Resource Relation:
Patent File Date: 2013 Oct 07
Country of Publication:
United States
Language:
English

References (22)

Apparatus for switching high voltage pulses with picosecond accuracy patent August 1980
High speed photodetector patent April 1982
Bulk semiconductor switch patent March 1984
Method of biasing a photoconductive detector and detector apparatus therefor patent August 1985
Multiple gap optically activated switch patent December 1986
Optically switched microwave pulse generator patent April 1989
High power photoconductor bulk GaAs switch patent July 1991
Pulse sharpening using an optical pulse patent June 1994
Photoconductive switch patent July 2001
Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications patent March 2006
Photo-semiconductor device and method of manufacturing the same patent November 2009
Optically initiated silicon carbide high voltage switch patent February 2011
Optically-initiated silicon carbide high voltage switch patent February 2012
Optically-initiated silicon carbide high voltage switch with contoured-profile electrode interfaces patent September 2012
Photoconductive switch package patent October 2013
High voltage photo switch package module patent February 2014
Optically Initiated Silicon Carbide High Voltage Switch patent-application April 2007
Optically Controlled Silicon Carbide and Related Wide-Bandgap Transistors and Thyristors patent-application December 2007
System and Method of Modulating Electrical Signals Using Photoconductive Wide Bandgap Semiconductors as Variables Resistors patent-application October 2009
Photoconductive Switch Package patent-application November 2010
Optically-Initiated Silicon Carbide High Voltage Switch patent-application May 2011
Photoconductive switch package patent-application February 2014

Similar Records

Photoconductive switch package
Patent · Tue Oct 22 00:00:00 EDT 2013 · OSTI ID:1224426

6H-SiC Photoconductive Switches Triggered at Below Bandgap Wavelengths
Journal Article · Tue Feb 13 00:00:00 EST 2007 · IEEE Transactions on Dielectrics and Electrical Insulation, vol. 14, no. 4, August 1, 2007, NA · OSTI ID:1224426

Reliable electrical contacts for high power photoconductive switches
Patent · Tue Nov 20 00:00:00 EST 2018 · OSTI ID:1224426