Notes on the plasma resonance peak employed to determine doping in SiC

Engelbrecht, J. A. A.; van Rooyen, I. J.; Henry, A.; Janzen, E.; Sephton, B.

doi:10.1016/j.infrared.2015.07.007

Title: Notes on the plasma resonance peak employed to determine doping in SiC

Journal Article · Thu Jul 23 00:00:00 EDT 2015 · Infrared Physics and Technology

DOI:https://doi.org/10.1016/j.infrared.2015.07.007· OSTI ID:1294505

Engelbrecht, J. A. A. ^[1]; van Rooyen, I. J. ^[2]; Henry, A. ^[3]; Janzen, E. ^[3]; Sephton, B. ^[1]

Nelson Mandela Metropolitan Univ., Port Elizabeth (South Africa)
Idaho National Lab. (INL), Idaho Falls, ID (United States)
Linkoping Univ., Linkoping (Sweden)

In this study, the doping level of a semiconductor material can be determined using the plasma resonance frequency to obtain the carrier concentration associated with doping. This paper provides an overview of the procedure for the three most common polytypes of SiC. Results for 3C-SiC are presented and discussed. In phosphorus doped samples analysed, it is submitted that the 2nd plasma resonance cannot be detected due to high values of the free carrier damping constant γ.

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Research Organization:: Idaho National Laboratory (INL), Idaho Falls, ID (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC07-05ID14517

OSTI ID:: 1294505

Report Number(s):: INL/JOU-15-35866; PII: S1350449515001620

Journal Information:: Infrared Physics and Technology, Vol. 72, Issue C; ISSN 1350-4495

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 4 works

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Title: Notes on the plasma resonance peak employed to determine doping in SiC

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