The Effect of Grain Size and Phosphorous-doping of Polycrystalline 3C-SiC on Infrared Reflectance Spectra
Journal Article
·
· Journal of Nuclear Materials
The effect of P-doping and grain size of polycrystalline 3C-SiC on the infrared reflectance spectra is reported. The relationship between grain size and full width at half maximum (FWHM) suggest that the behaviour of the 3C-SiC with the highest phosphorous doping level (of 1.2 x 10{sup 19} at. cm{sup -3}) is different from those with lower doping levels (< 6.6 x 10{sup 18} at. cm{sup -3}). It is also further demonstrated that the plasma resonance frequency (w{sub p}) is not influenced by the grain size.
- Research Organization:
- Idaho National Lab. (INL), Idaho Falls, ID (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- DE-AC07-05ID14517
- OSTI ID:
- 1038923
- Report Number(s):
- INL/JOU-11-23618; JNUMAM; TRN: US1202048
- Journal Information:
- Journal of Nuclear Materials, Vol. 422, Issue 1-3; ISSN 0022-3115
- Country of Publication:
- United States
- Language:
- English
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