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Title: Systems and methods for forming defects on graphitic materials and curing radiation-damaged graphitic materials

Patent ·
OSTI ID:1176481
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Systems and methods are disclosed herein for forming defects on graphitic materials. The methods for forming defects include applying a radiation reactive material on a graphitic material, irradiating the applied radiation reactive material to produce a reactive species, and permitting the reactive species to react with the graphitic material to form defects. Additionally, disclosed are methods for removing defects on graphitic materials.

Research Organization:
Columbia Univ., New York, NY (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
FG02-98ER14861
Assignee:
The Trustees of Columbia University in the City of New York (New York, NY)
Patent Number(s):
8,273,525
Application Number:
12/770,242
OSTI ID:
1176481
Resource Relation:
Patent File Date: 2010 Apr 29
Country of Publication:
United States
Language:
English

References (5)

Catalytic CVD Growth of Nanomaterials for Advanced Interconnects: Si Nanowires and Few Graphene Layers/Carbon-Nanotubes Composites conference January 2011
Heteroepitaxial graphite on 6 H − SiC ( 0001 ) :  Interface formation through conduction-band electronic structure journal December 1998
Gold nanoparticle arrays on graphite surfaces journal March 2004
Direct graphene growth on insulator journal August 2011
Direct growth of few layer graphene on hexagonal boron nitride by chemical vapor deposition journal June 2011

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36 MATERIALS SCIENCE