Detection and characterization of multi-filament evolution during resistive switching

Mickel, Patrick R.; Lohn, Andrew J.; Marinella, Matthew J.

doi:10.1063/1.4892471

Title: Detection and characterization of multi-filament evolution during resistive switching

Journal Article · Tue Aug 05 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4892471· OSTI ID:1145719

Mickel, Patrick R. ^[1]; Lohn, Andrew J. ^[1]; Marinella, Matthew J. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

We present resistive switching data in TaO_x memristors displaying signatures of multi-filament switching modes, and develop a geometrically defined equivalent circuit to separate the individual resistances and powers dissipated in each filament. Using these resolved values, we compare the individual switching curves of each filament and demonstrate that the switching data of each filament collapse onto a single switching curve determined by the analytical steady-state resistive switching solution for filamentary switching. Analyzing our results in terms of this solution, we determine the switching temperature, heat flow, conductivity, and time evolving areas of each filament during resistive switching. Finally, we discuss operational modes which may limit the formation of additional conducting filaments, potentially leading to increased device endurance.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1145719

Report Number(s):: SAND2014-4055J; APPLAB; 518013

Journal Information:: Applied Physics Letters, Vol. 105, Issue 5; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 16 works

Citation information provided by
Web of Science

References (20)

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges Waser, Rainer; Dittmann, Regina; Staikov, Georgi Advanced Materials, Vol. 21, Issue 25-26, p. 2632-2663 https://doi.org/10.1002/adma.200900375	journal	July 2009
Nanoionics-based resistive switching memories Waser, Rainer; Aono, Masakazu Nature Materials, Vol. 6, Issue 11, p. 833-840 https://doi.org/10.1038/nmat2023	journal	November 2007
Memristive switching: physical mechanisms and applications Mickel, Patrick R.; Lohn, Andrew J.; Marinella, Matthew J. Modern Physics Letters B, Vol. 28, Issue 10, Article No. 1430003 https://doi.org/10.1142/S0217984914300038	journal	April 2014
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory Kwon, Deok-Hwang; Kim, Kyung Min; Jang, Jae Hyuck Nature Nanotechnology, Vol. 5, Issue 2 https://doi.org/10.1038/nnano.2009.456	journal	January 2010
Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor Miao, Feng; Strachan, John Paul; Yang, J. Joshua Advanced Materials, Vol. 23, Issue 47, p. 5633-5640 https://doi.org/10.1002/adma.201103379	journal	November 2011
Memristive devices for computing Yang, J. Joshua; Strukov, Dmitri B.; Stewart, Duncan R. Nature Nanotechnology, Vol. 8, Issue 1, p. 13-24 https://doi.org/10.1038/nnano.2012.240	journal	January 2013
‘Memristive’ switches enable ‘stateful’ logic operations via material implication Borghetti, Julien; Snider, Gregory S.; Kuekes, Philip J. Nature, Vol. 464, Issue 7290 https://doi.org/10.1038/nature08940	journal	April 2010
Nanometer-Scale ${\rm HfO}_{x}$ RRAM Zhang, Zhiping; Wu, Yi; Wong, H. -S. Philip IEEE Electron Device Letters, Vol. 34, Issue 8 https://doi.org/10.1109/LED.2013.2265404	journal	August 2013
Sub-nanosecond switching of a tantalum oxide memristor Torrezan, Antonio C.; Strachan, John Paul; Medeiros-Ribeiro, Gilberto Nanotechnology, Vol. 22, Issue 48 https://doi.org/10.1088/0957-4484/22/48/485203	journal	November 2011
Isothermal Switching and Detailed Filament Evolution in Memristive Systems Mickel, Patrick R.; Lohn, Andrew J.; James, Conrad D. Advanced Materials, Vol. 26, Issue 26, p. 4486-4490 https://doi.org/10.1002/adma.201306182	journal	April 2014
Scaling Effect on Unipolar and Bipolar Resistive Switching of Metal Oxides Yanagida, Takeshi; Nagashima, Kazuki; Oka, Keisuke Scientific Reports, Vol. 3, Issue 1 https://doi.org/10.1038/srep01657	journal	April 2013
On the weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination-part I: theory, methodology, experimental techniques Wu, E. Y.; Vollertsen, R. -P. IEEE Transactions on Electron Devices, Vol. 49, Issue 12 https://doi.org/10.1109/TED.2002.805612	journal	December 2002
On the weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination-part II: experimental results and the effects of stress conditions Wu, E. Y.; Sune, J.; Lai, W. IEEE Transactions on Electron Devices, Vol. 49, Issue 12 https://doi.org/10.1109/TED.2002.805603	journal	December 2002
A CMOS Compatible, Forming Free TaO_x ReRAM Lohn, A. J.; Stevens, J. E.; Mickel, P. R. ECS Transactions, Vol. 58, Issue 5, p. 59-65 https://doi.org/10.1149/05805.0059ecst	journal	August 2013
Optimizing TaO_x memristor performance and consistency within the reactive sputtering “forbidden region” Lohn, Andrew J.; Stevens, James E.; Mickel, Patrick R. Applied Physics Letters, Vol. 103, Issue 6, Article No. 063502 https://doi.org/10.1063/1.4817927	journal	August 2013
Reactive sputtering of substoichiometric Ta₂O_x for resistive memory applications Stevens, James E.; Lohn, Andrew J.; Decker, Seth A. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 32, Issue 2, Article No. 021501 https://doi.org/10.1116/1.4828701	journal	March 2014
Dynamics of percolative breakdown mechanism in tantalum oxide resistive switching Lohn, Andrew J.; Mickel, Patrick R.; Marinella, Matthew J. Applied Physics Letters, Vol. 103, Issue 17, Article No. 173503 https://doi.org/10.1063/1.4826277	journal	October 2013
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta₂O_5−x/TaO_2−x bilayer structures Lee, Myoung-Jae; Lee, Chang Bum; Lee, Dongsoo Nature Materials, Vol. 10, Issue 8, p. 625-630 https://doi.org/10.1038/nmat3070	journal	July 2011
High switching endurance in TaOx memristive devices Yang, J. Joshua; Zhang, M. -X.; Strachan, John Paul Applied Physics Letters, Vol. 97, Issue 23 https://doi.org/10.1063/1.3524521	journal	December 2010
Analytical estimations for thermal crosstalk, retention, and scaling limits in filamentary resistive memory Lohn, Andrew J.; Mickel, Patrick R.; Marinella, Matthew J. Journal of Applied Physics, Vol. 115, Issue 23, Article No. 234507 https://doi.org/10.1063/1.4885045	journal	June 2014

Cited By (1)

Electroforming-Free TaOx Memristors using Focused Ion Beam Irradiations Pacheco, J. L.; Perry, D. L.; Hughart, D. R. arXiv https://doi.org/10.48550/arxiv.1710.09491	text	January 2017

Similar Records

Filament-Free Bulk Resistive Memory Enables Deterministic Analogue Switching

Journal Article · Tue Sep 22 00:00:00 EDT 2020 · Advanced Materials · OSTI ID:1145719

Li, Yiyang; Fuller, Elliot J.; Sugar, Joshua D.; +8 more

Stable Metallic Enrichment in Conductive Filaments in TaO_x–Based Resistive Switches Arising from Competing Diffusive Fluxes

Journal Article · Mon Apr 29 00:00:00 EDT 2019 · Advanced Electronic Materials · OSTI ID:1145719

Ma, Yuanzhi; Goodwill, Jonathan M.; Li, Dasheng; +5 more

Protons: Critical Species for Resistive Switching in Interface‐Type Memristors

Journal Article · Tue Oct 18 00:00:00 EDT 2022 · Advanced Electronic Materials · OSTI ID:1145719

Kunwar, Sundar; Somodi, Chase Bennett; Lalk, Rebecca A.; +12 more

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY

Title: Detection and characterization of multi-filament evolution during resistive switching

Citation Formats

References (20)

Cited By (1)

Similar Records

Related Subjects