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Title: Optoelectronic devices utilizing materials having enhanced electronic transitions

Patent ·
OSTI ID:1083784

An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.

Research Organization:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC51-06NA25396
Assignee:
Los Alamos National Security, LLC (Los Alamos, NM)
Patent Number(s):
8,415,758
Application Number:
13/032,076
OSTI ID:
1083784
Country of Publication:
United States
Language:
English

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Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels journal June 1997
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Nanowire light emitting device and method of fabricating the same patent-application October 2005
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