Optoelectronic devices utilizing materials having enhanced electronic transitions
Patent
·
OSTI ID:1083784
An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.
- Research Organization:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC51-06NA25396
- Assignee:
- Los Alamos National Security, LLC (Los Alamos, NM)
- Patent Number(s):
- 8,415,758
- Application Number:
- 13/032,076
- OSTI ID:
- 1083784
- Country of Publication:
- United States
- Language:
- English
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