Method of fabricating an optoelectronic device having a bulk heterojunction

Shtein, Max; Yang, Fan; Forrest, Stephen R

Method of fabricating an optoelectronic device having a bulk heterojunction

Patent · Tue Oct 14 04:00:00 EDT 2008

OSTI ID:985396

Shtein, Max ^[1]; Yang, Fan ^[2]; Forrest, Stephen R ^[2]

Ann Arbor, MI
Princeton, NJ

A method of fabricating an optoelectronic device comprises: depositing a first layer having protrusions over a first electrode, in which the first layer comprises a first organic small molecule material; depositing a second layer on the first layer such that the second layer is in physical contact with the first layer; in which the smallest lateral dimension of the protrusions are between 1 to 5 times the exciton diffusion length of the first organic small molecule material; and depositing a second electrode over the second layer to form the optoelectronic device. A method of fabricating an organic optoelectronic device having a bulk heterojunction is also provided and comprises: depositing a first layer with protrusions over an electrode by organic vapor phase deposition; depositing a second layer on the first layer where the interface of the first and second layers forms a bulk heterojunction; and depositing another electrode over the second layer.

Research Organization:: Midwest Research Institute

Sponsoring Organization:: USDOE

DOE Contract Number:: AC36-99GO10337

Assignee:: The Trustees of Princeton University (Princeton, NJ)

Patent Number(s):: 7,435,617

Application Number:: 10/999,716

OSTI ID:: 985396

Country of Publication:: United States

Language:: English

References (11)

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Small molecular weight organic thin-film photodetectors and solar cells Peumans, Peter; Yakimov, Aharon; Forrest, Stephen R. Journal of Applied Physics, Vol. 93, Issue 7, p. 3693-3723 https://doi.org/10.1063/1.1534621	journal	April 2003
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