Ultraviolet photosulfidation of III-V compound semiconductors for electronic passivation
A new vacuum-compatible passivation technique for III-V compound semiconductors has been developed. Sulfur passivation of GaAs(100) is produced by ultraviolet photolytic deposition of a sulfide species from vapor phase elemental sulfur. Photoluminescence studies of the photosulfided GaAs reveal a degree of passivation greater than or equal to that produced by conventional (NH{sub 4}{sub 2}S) solution treatment. X-ray Photoelectron Spectroscopy has shown that the sulfur resides on the surface as a single reduced sulfur species, either as sulfide of disulfide, indicating complete fragmentation of the S{sub 8} ring by UV light in proximity to the surface. The degree of photosulfidation depends strongly on surface preparation as demonstrated by the described surface oxide removal studies.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 10188832
- Report Number(s):
- SAND-93-1107C; CONF-9311104-2; ON: DE94001417; BR: GB0103012
- Resource Relation:
- Conference: 40. national symposium of the American Vacuum Society (AVS),Orlando, FL (United States),15-19 Nov 1993; Other Information: PBD: [1993]
- Country of Publication:
- United States
- Language:
- English
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