Internal gettering by metal alloy clusters

Buonassisi, Anthony; Heuer, Matthias; Istratov, Andrei A; Pickett, Matthew D; Marcus, Mathew A; Weber, Eicke R

Title: Internal gettering by metal alloy clusters

Patent · Tue Jul 27 00:00:00 EDT 2010

OSTI ID:1015499

Buonassisi, Anthony ^[1]; Heuer, Matthias ^[2]; Istratov, Andrei A ^[3]; Pickett, Matthew D ^[2]; Marcus, Mathew A ^[2]; Weber, Eicke R ^[4]

San Diego, CA
Berkeley, CA
Albany, CA
Piedmont, CA

The present invention relates to the internal gettering of impurities in semiconductors by metal alloy clusters. In particular, intermetallic clusters are formed within silicon, such clusters containing two or more transition metal species. Such clusters have melting temperatures below that of the host material and are shown to be particularly effective in gettering impurities within the silicon and collecting them into isolated, less harmful locations. Novel compositions for some of the metal alloy clusters are also described.

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Sponsoring Organization:: USDOE

Assignee:: The Regents of the University of California (Oakland, CA)

Patent Number(s):: 7,763,095

Application Number:: 11/447,223

OSTI ID:: 1015499

Country of Publication:: United States

Language:: English

References (17)

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