Competitive gettering of copper in Czochralski silicon by implantation-induced cavities and internal gettering sites
- Department of Materials Science and Mineral Engineering, University of California at Berkeley, Berkeley, California 94720-1760 (United States)
- Sandia National Laboratories, P.O. Box 5800, Albuquerque, New Mexico 87185-1056 (United States)
The effectiveness of copper gettering by implantation-induced cavities in competition with internal gettering sites in silicon was demonstrated. The cavities were formed in the near surface region by He implantation and annealing while the internal gettering sites were created in the material{close_quote}s bulk by a ramped hi{endash}lo{endash}hi oxygen precipitation heat treatment. Ion implantation was used to controllably introduce the copper. The quantity of implanted copper was below that corresponding to saturation of solution throughout the wafer at the gettering temperatures of 700 and 800{degree}C. The cavities were found to be an effective gettering site in the presence of internal gettering sites with only a small amount of copper being gettered at the internal gettering sites. These results have important implications for optimal gettering of metallic impurities from integrated circuit device regions. {copyright} {ital 1996 American Institute of Physics.}
- Research Organization:
- Lawrence Berkeley National Laboratory
- DOE Contract Number:
- AC03-76SF00098; AC04-94AL85000
- OSTI ID:
- 389241
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 69; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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