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Title: Intrinsically stretchable and healable semiconducting polymer for organic transistors

Journal Article · · Nature (London)
DOI:https://doi.org/10.1038/nature20102· OSTI ID:1360199
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [2];  [1];  [3];  [4];  [1];  [3];  [5];  [6];  [1];  [1]
  1. Stanford Univ., CA (United States). Dept. of Chemical Engineering
  2. Stanford Univ., CA (United States). Dept. of Chemical Engineering; Asahi Kasei Corporation, Fuji (Japan). Corporate Research and Development, Performance Materials Technology Center
  3. Stanford Univ., CA (United States). Dept. of Electrical Engineering
  4. Stanford Univ., CA (United States). Dept. of Chemical Engineering; SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Synchrotron Radiation Lightsource (SSRL)
  5. Stanford Univ., CA (United States). Dept. of of Civil and Environmental Engineering
  6. Stanford Univ., CA (United States). Dept. of Chemical Engineering; Samsung Advanced Inst. of Technology, Yeongtong-gu, Suwon-si (South Korea)

Developing a molecular design paradigm for conjugated polymers applicable to intrinsically stretchable semiconductors is crucial toward the next generation of wearable electronics. Current molecular design rules for high charge carrier mobility semiconducting polymers are unable to render the fabricated devices simultaneously stretchable and mechanically robust. Here in this paper, we present a new design concept to address the above challenge, while maintaining excellent electronic performance. This concept involves introducing chemical moieties to promote dynamic non-covalent crosslinking of the conjugated polymers. These non-covalent covalent crosslinking moieties are able to undergo an energy dissipation mechanism through breakage of bonds when strain is applied, while retaining its high charge transport ability. As a result, our polymer is able to recover its high mobility performance (>1 cm2/Vs) even after 100 cycles at 100% applied strain. Furthermore, we observed that the polymer can be efficiently repaired and/or healed with a simple heat and solvent treatment. These improved mechanical properties of our fabricated stretchable semiconductor enabled us to fabricate highly stretchable and high performance wearable organic transistors. This material design concept should illuminate and advance the pathways for future development of fully stretchable and healable skin-inspired wearable electronics.

Research Organization:
SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); US Air Force Office of Scientific Research (AFOSR); Ministry of Science and Technology, Taiwan; Swiss National Science Foundation (SNSF)
Grant/Contract Number:
AC02-76SF00515; FA9550-15-1-0106; DGE-114747
OSTI ID:
1360199
Journal Information:
Nature (London), Vol. 539, Issue 7629; ISSN 0028-0836
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 833 works
Citation information provided by
Web of Science

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A Bioinspired Mineral Hydrogel as a Self-Healable, Mechanically Adaptable Ionic Skin for Highly Sensitive Pressure Sensing journal April 2017
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Synthesis of block copolymers comprised of poly(3-hexylthiophene) segment with trisiloxane side chains and their application to organic thin film transistor journal August 2018
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